1 Ocak 2021 Dergi makalesi Açık Erişim

Yedikardes, Beyza; Ordokhani, Fereshteh; Akkan, Nihat; Kurt, Ece; Yavuz, Nilgun Karatepe; Zayim, Esra; Altun, Mustafa

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{
  "@context": "https://schema.org/", 
  "@id": 236006, 
  "@type": "ScholarlyArticle", 
  "creator": [
    {
      "@type": "Person", 
      "affiliation": "Istanbul Tech Univ, Dept Nano Sci & Nano Engn, Istanbul, Turkey", 
      "name": "Yedikardes, Beyza"
    }, 
    {
      "@type": "Person", 
      "affiliation": "Istanbul Tech Univ, Dept Nano Sci & Nano Engn, Istanbul, Turkey", 
      "name": "Ordokhani, Fereshteh"
    }, 
    {
      "@type": "Person", 
      "affiliation": "Yildiz Tehn Univ, Dept Elect & Commun Engn, Istanbul, Turkey", 
      "name": "Akkan, Nihat"
    }, 
    {
      "@type": "Person", 
      "affiliation": "Istanbul Tech Univ, Dept Phys Engn, Istanbul, Turkey", 
      "name": "Kurt, Ece"
    }, 
    {
      "@type": "Person", 
      "affiliation": "Istanbul Tech Univ, Inst Energy, Istanbul, Turkey", 
      "name": "Yavuz, Nilgun Karatepe"
    }, 
    {
      "@type": "Person", 
      "affiliation": "Istanbul Tech Univ, Dept Phys Engn, Istanbul, Turkey", 
      "name": "Zayim, Esra"
    }, 
    {
      "@type": "Person", 
      "affiliation": "Istanbul Tech Univ, Dept Elect & Commun Engn, Istanbul, Turkey", 
      "name": "Altun, Mustafa"
    }
  ], 
  "datePublished": "2021-01-01", 
  "description": "In recent decades, conjugated polymers have been widely studied in organic electronics to produce low-cost transistors. Additionally, these polymers are doped with inorganic materials in order to improve the transistor performance in terms of mobility, on/off current ratio, and threshold voltage as well as to ease processability. In this study, we use various doping concentrations (0-50% in weight) of tungsten oxide (WO3) in poly(3-hexylthiophene) (P3HT), a well-studied organic semiconductor, to optimize the transistor performance. We treat spin-coated film of the hybrid P3HT:WO3 solution on hexamethyl disilazane (HMDS) as channels of commercial test chips including 20 transistors with their gold electrodes. Compared to using pristine P3HT, the proposed hybrid P3HT:WO3 formula which significantly improves the transistor performance. Almost 105 times larger mobilities, almost 10 times larger on/off current ratios, and nearly 22 V decrease in threshold voltages were achieved. It was also observed that the excess amount of WO3 doping leads to worse mobilities and on/off current ratios.", 
  "headline": "Enhanced Electrical Properties of P3HT:WO3 Hybrid Thin Film Transistors", 
  "identifier": 236006, 
  "image": "https://aperta.ulakbim.gov.tr/static/img/logo/aperta_logo_with_icon.svg", 
  "license": "http://www.opendefinition.org/licenses/cc-by", 
  "name": "Enhanced Electrical Properties of P3HT:WO3 Hybrid Thin Film Transistors", 
  "url": "https://aperta.ulakbim.gov.tr/record/236006"
}