1 Ocak 2021 Dergi makalesi Açık Erişim

Yedikardes, Beyza; Ordokhani, Fereshteh; Akkan, Nihat; Kurt, Ece; Yavuz, Nilgun Karatepe; Zayim, Esra; Altun, Mustafa

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  <identifier identifierType="URL">https://aperta.ulakbim.gov.tr/record/236006</identifier>
  <creators>
    <creator>
      <creatorName>Yedikardes, Beyza</creatorName>
      <givenName>Beyza</givenName>
      <familyName>Yedikardes</familyName>
      <affiliation>Istanbul Tech Univ, Dept Nano Sci &amp; Nano Engn, Istanbul, Turkey</affiliation>
    </creator>
    <creator>
      <creatorName>Ordokhani, Fereshteh</creatorName>
      <givenName>Fereshteh</givenName>
      <familyName>Ordokhani</familyName>
      <affiliation>Istanbul Tech Univ, Dept Nano Sci &amp; Nano Engn, Istanbul, Turkey</affiliation>
    </creator>
    <creator>
      <creatorName>Akkan, Nihat</creatorName>
      <givenName>Nihat</givenName>
      <familyName>Akkan</familyName>
      <affiliation>Yildiz Tehn Univ, Dept Elect &amp; Commun Engn, Istanbul, Turkey</affiliation>
    </creator>
    <creator>
      <creatorName>Kurt, Ece</creatorName>
      <givenName>Ece</givenName>
      <familyName>Kurt</familyName>
      <affiliation>Istanbul Tech Univ, Dept Phys Engn, Istanbul, Turkey</affiliation>
    </creator>
    <creator>
      <creatorName>Yavuz, Nilgun Karatepe</creatorName>
      <givenName>Nilgun Karatepe</givenName>
      <familyName>Yavuz</familyName>
      <affiliation>Istanbul Tech Univ, Inst Energy, Istanbul, Turkey</affiliation>
    </creator>
    <creator>
      <creatorName>Zayim, Esra</creatorName>
      <givenName>Esra</givenName>
      <familyName>Zayim</familyName>
      <affiliation>Istanbul Tech Univ, Dept Phys Engn, Istanbul, Turkey</affiliation>
    </creator>
    <creator>
      <creatorName>Altun, Mustafa</creatorName>
      <givenName>Mustafa</givenName>
      <familyName>Altun</familyName>
      <affiliation>Istanbul Tech Univ, Dept Elect &amp; Commun Engn, Istanbul, Turkey</affiliation>
    </creator>
  </creators>
  <titles>
    <title>Enhanced Electrical Properties Of P3Ht:Wo3 Hybrid Thin Film Transistors</title>
  </titles>
  <publisher>Aperta</publisher>
  <publicationYear>2021</publicationYear>
  <dates>
    <date dateType="Issued">2021-01-01</date>
  </dates>
  <resourceType resourceTypeGeneral="Text">Journal article</resourceType>
  <alternateIdentifiers>
    <alternateIdentifier alternateIdentifierType="url">https://aperta.ulakbim.gov.tr/record/236006</alternateIdentifier>
  </alternateIdentifiers>
  <relatedIdentifiers>
    <relatedIdentifier relatedIdentifierType="DOI" relationType="IsIdenticalTo">10.1007/s11664-021-08764-4</relatedIdentifier>
  </relatedIdentifiers>
  <rightsList>
    <rights rightsURI="http://www.opendefinition.org/licenses/cc-by">Creative Commons Attribution</rights>
    <rights rightsURI="info:eu-repo/semantics/openAccess">Open Access</rights>
  </rightsList>
  <descriptions>
    <description descriptionType="Abstract">In recent decades, conjugated polymers have been widely studied in organic electronics to produce low-cost transistors. Additionally, these polymers are doped with inorganic materials in order to improve the transistor performance in terms of mobility, on/off current ratio, and threshold voltage as well as to ease processability. In this study, we use various doping concentrations (0-50% in weight) of tungsten oxide (WO3) in poly(3-hexylthiophene) (P3HT), a well-studied organic semiconductor, to optimize the transistor performance. We treat spin-coated film of the hybrid P3HT:WO3 solution on hexamethyl disilazane (HMDS) as channels of commercial test chips including 20 transistors with their gold electrodes. Compared to using pristine P3HT, the proposed hybrid P3HT:WO3 formula which significantly improves the transistor performance. Almost 105 times larger mobilities, almost 10 times larger on/off current ratios, and nearly 22 V decrease in threshold voltages were achieved. It was also observed that the excess amount of WO3 doping leads to worse mobilities and on/off current ratios.</description>
  </descriptions>
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