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Room-temperature photoluminescence in layered epsilon-GaSe, GaSe0.9S0.1, GaSe0.8S0.2 under pressure

Masui, A; Onari, S; Allakhverdiev, K; Gashimzade, F; Mamedov, T


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{
  "@context": "https://schema.org/", 
  "@id": 96179, 
  "@type": "ScholarlyArticle", 
  "creator": [
    {
      "@type": "Person", 
      "name": "Masui, A"
    }, 
    {
      "@type": "Person", 
      "name": "Onari, S"
    }, 
    {
      "@type": "Person", 
      "name": "Allakhverdiev, K"
    }, 
    {
      "@type": "Person", 
      "name": "Gashimzade, F"
    }, 
    {
      "@type": "Person", 
      "name": "Mamedov, T"
    }
  ], 
  "datePublished": "2001-01-01", 
  "description": "Photoluminescence spectra of the direct free excitons and strain-induced states in epsilon -GaSe, GaSe0.9S0.1, and GaSe0.8S0.2 under hydrostatic pressure up to 1 GPa are reported for the first time. Red-shift and broadening with pressure were detected for all bands. The pressure coefficients of the direct free excitons and strain-induced slates were determined and compared with those existing in literature.", 
  "headline": "Room-temperature photoluminescence in layered epsilon-GaSe, GaSe0.9S0.1, GaSe0.8S0.2 under pressure", 
  "identifier": 96179, 
  "image": "https://aperta.ulakbim.gov.tr/static/img/logo/aperta_logo_with_icon.svg", 
  "license": "http://www.opendefinition.org/licenses/cc-by", 
  "name": "Room-temperature photoluminescence in layered epsilon-GaSe, GaSe0.9S0.1, GaSe0.8S0.2 under pressure", 
  "url": "https://aperta.ulakbim.gov.tr/record/96179"
}
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