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Room-temperature photoluminescence in layered epsilon-GaSe, GaSe0.9S0.1, GaSe0.8S0.2 under pressure

2001    Masui, A; Onari, S; Allakhverdiev, K; Gashimzade, F; Mamedov, T

Photoluminescence spectra of the direct free excitons and strain-induced states in epsilon -GaSe, GaSe0.9S0.1, and GaSe0.8S0.2 under hydrostatic pressure up to 1 GPa are reported for the first time. Red-shift and broadening with pressure were detected for all bands. The pressure coefficients of the direct free excitons and strain-induced slates were determined and compared with those existing in literature.