1 Ocak 2002 Dergi makalesi Açık Erişim

Huseynov, E; Ismailov, N; Samedov, SR; Baykan, O

Dublin Core

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  <dc:creator>Huseynov, E</dc:creator>
  <dc:creator>Ismailov, N</dc:creator>
  <dc:creator>Samedov, SR</dc:creator>
  <dc:creator>Baykan, O</dc:creator>
  <dc:date>2002-01-01</dc:date>
  <dc:description>High sensitive IR detectors were developed by using noncompensated CdxHg1-xTe (x=0.25divided by0.3) with the field-effect electrode from InxO3, which were received by magnetron spattering onto the anodized surface of the single crystal. Photoelectric properties (spectral distribution of the photoconductivity, time-response, the uniformity of the spatial distribution of sensitivity) were investigated under different potential applied to the field-effect electrode. For high sensitive material the detectivity D* = 8.10(11) cm Hz(1/2) W-1 was obtained at the wavelength of 5 mum in the aperture angle of 30degrees. It was shown that the semitransparent field-effect electrode made from In2O3 allows to rule the output parameters of the detector in a wide range.</dc:description>
  <dc:identifier>https://aperta.ulakbim.gov.trrecord/94803</dc:identifier>
  <dc:identifier>oai:zenodo.org:94803</dc:identifier>
  <dc:rights>info:eu-repo/semantics/openAccess</dc:rights>
  <dc:rights>http://www.opendefinition.org/licenses/cc-by</dc:rights>
  <dc:source>INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES 23(9) 1337-1345</dc:source>
  <dc:title>IR-detectors based on IN2O3-anode oxide-CDxHg1-xTe</dc:title>
  <dc:type>info:eu-repo/semantics/article</dc:type>
  <dc:type>publication-article</dc:type>
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