1 Ocak 2002 Dergi makalesi Açık Erişim

Huseynov, E; Ismailov, N; Samedov, SR; Baykan, O

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{
  "@context": "https://schema.org/", 
  "@id": 94803, 
  "@type": "ScholarlyArticle", 
  "creator": [
    {
      "@type": "Person", 
      "name": "Huseynov, E"
    }, 
    {
      "@type": "Person", 
      "name": "Ismailov, N"
    }, 
    {
      "@type": "Person", 
      "name": "Samedov, SR"
    }, 
    {
      "@type": "Person", 
      "name": "Baykan, O"
    }
  ], 
  "datePublished": "2002-01-01", 
  "description": "High sensitive IR detectors were developed by using noncompensated CdxHg1-xTe (x=0.25divided by0.3) with the field-effect electrode from InxO3, which were received by magnetron spattering onto the anodized surface of the single crystal. Photoelectric properties (spectral distribution of the photoconductivity, time-response, the uniformity of the spatial distribution of sensitivity) were investigated under different potential applied to the field-effect electrode. For high sensitive material the detectivity D* = 8.10(11) cm Hz(1/2) W-1 was obtained at the wavelength of 5 mum in the aperture angle of 30degrees. It was shown that the semitransparent field-effect electrode made from In2O3 allows to rule the output parameters of the detector in a wide range.", 
  "headline": "IR-detectors based on IN2O3-anode oxide-CDxHg1-xTe", 
  "identifier": 94803, 
  "image": "https://aperta.ulakbim.gov.tr/static/img/logo/aperta_logo_with_icon.svg", 
  "license": "http://www.opendefinition.org/licenses/cc-by", 
  "name": "IR-detectors based on IN2O3-anode oxide-CDxHg1-xTe", 
  "url": "https://aperta.ulakbim.gov.tr/record/94803"
}