1 Ocak 2002 Dergi makalesi Açık Erişim

Huseynov, E; Ismailov, N; Samedov, SR; Baykan, O

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  <identifier identifierType="URL">https://aperta.ulakbim.gov.tr/record/94803</identifier>
  <creators>
    <creator>
      <creatorName>Huseynov, E</creatorName>
      <givenName>E</givenName>
      <familyName>Huseynov</familyName>
    </creator>
    <creator>
      <creatorName>Ismailov, N</creatorName>
      <givenName>N</givenName>
      <familyName>Ismailov</familyName>
    </creator>
    <creator>
      <creatorName>Samedov, SR</creatorName>
      <givenName>SR</givenName>
      <familyName>Samedov</familyName>
    </creator>
    <creator>
      <creatorName>Baykan, O</creatorName>
      <givenName>O</givenName>
      <familyName>Baykan</familyName>
    </creator>
  </creators>
  <titles>
    <title>Ir-Detectors Based On In2O3-Anode Oxide-Cdxhg1-Xte</title>
  </titles>
  <publisher>Aperta</publisher>
  <publicationYear>2002</publicationYear>
  <dates>
    <date dateType="Issued">2002-01-01</date>
  </dates>
  <resourceType resourceTypeGeneral="Text">Journal article</resourceType>
  <alternateIdentifiers>
    <alternateIdentifier alternateIdentifierType="url">https://aperta.ulakbim.gov.tr/record/94803</alternateIdentifier>
  </alternateIdentifiers>
  <relatedIdentifiers>
    <relatedIdentifier relatedIdentifierType="DOI" relationType="IsVersionOf">10.81043/aperta.94802</relatedIdentifier>
    <relatedIdentifier relatedIdentifierType="DOI" relationType="IsIdenticalTo">10.81043/aperta.94803</relatedIdentifier>
  </relatedIdentifiers>
  <rightsList>
    <rights rightsURI="http://www.opendefinition.org/licenses/cc-by">Creative Commons Attribution</rights>
    <rights rightsURI="info:eu-repo/semantics/openAccess">Open Access</rights>
  </rightsList>
  <descriptions>
    <description descriptionType="Abstract">High sensitive IR detectors were developed by using noncompensated CdxHg1-xTe (x=0.25divided by0.3) with the field-effect electrode from InxO3, which were received by magnetron spattering onto the anodized surface of the single crystal. Photoelectric properties (spectral distribution of the photoconductivity, time-response, the uniformity of the spatial distribution of sensitivity) were investigated under different potential applied to the field-effect electrode. For high sensitive material the detectivity D* = 8.10(11) cm Hz(1/2) W-1 was obtained at the wavelength of 5 mum in the aperture angle of 30degrees. It was shown that the semitransparent field-effect electrode made from In2O3 allows to rule the output parameters of the detector in a wide range.</description>
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