1 Ocak 2015 Dergi makalesi Açık Erişim

Dinc, Tolga; Ozeren, Emre; Caliskan, Can; Kayahan, Huseyin; Gurbuz, Yasar

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  <dc:creator>Dinc, Tolga</dc:creator>
  <dc:creator>Ozeren, Emre</dc:creator>
  <dc:creator>Caliskan, Can</dc:creator>
  <dc:creator>Kayahan, Huseyin</dc:creator>
  <dc:creator>Gurbuz, Yasar</dc:creator>
  <dc:date>2015-01-01</dc:date>
  <dc:description>This study presents a transmit/receive (T/R) module core chip with 4-bit operation using 0.25 mu m silicon-germanium (SiGe) bi-complementary metal-oxide semiconductor (BiCMOS) technology, for X-band phased array RADAR applications. The T/R module core chip consists of sub-blocks such as low noise amplifier, power amplifier, phase shifter, single-pole double-throw switch and variable gain amplifier. Switches incorporate n-type MOS devices while amplifiers are implemented with SiGe heterojunction bipolar transistors. Measurement results for the complete core chip and its individual sub-blocks are reported here. Between 9 and 10 GHz, the constructed T/R module achieves about 11 dB gain for both receiver (RX) and transmitter (TX) chains, while it has -10.5 dBm receiver chain third-order intermodulation intercept point (IIP3), and 16 dBm OP1 dB for transmitter chain. Root-mean-square phase error is measured as 5, whereas noise figure varies between 4 and 6 dB. The total power dissipation of core chip is about 285 mW, with a total area of 4.9 mm(2).</dc:description>
  <dc:identifier>https://aperta.ulakbim.gov.trrecord/80523</dc:identifier>
  <dc:identifier>oai:zenodo.org:80523</dc:identifier>
  <dc:rights>info:eu-repo/semantics/openAccess</dc:rights>
  <dc:rights>http://www.opendefinition.org/licenses/cc-by</dc:rights>
  <dc:source>IET MICROWAVES ANTENNAS &amp; PROPAGATION 9(9) 948-956</dc:source>
  <dc:title>X-band SiGe bi-complementary metal-oxide semiconductor transmit/receive module core chip for phased array RADAR applications</dc:title>
  <dc:type>info:eu-repo/semantics/article</dc:type>
  <dc:type>publication-article</dc:type>
</oai_dc:dc>