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X-band SiGe bi-complementary metal-oxide semiconductor transmit/receive module core chip for phased array RADAR applications

Dinc, Tolga; Ozeren, Emre; Caliskan, Can; Kayahan, Huseyin; Gurbuz, Yasar


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{
  "@context": "https://schema.org/", 
  "@id": 80523, 
  "@type": "ScholarlyArticle", 
  "creator": [
    {
      "@type": "Person", 
      "affiliation": "Sabanci Univ, FENS, TR-34956 Istanbul, Turkey", 
      "name": "Dinc, Tolga"
    }, 
    {
      "@type": "Person", 
      "affiliation": "Sabanci Univ, FENS, TR-34956 Istanbul, Turkey", 
      "name": "Ozeren, Emre"
    }, 
    {
      "@type": "Person", 
      "affiliation": "Sabanci Univ, FENS, TR-34956 Istanbul, Turkey", 
      "name": "Caliskan, Can"
    }, 
    {
      "@type": "Person", 
      "affiliation": "Sabanci Univ, FENS, TR-34956 Istanbul, Turkey", 
      "name": "Kayahan, Huseyin"
    }, 
    {
      "@type": "Person", 
      "affiliation": "Sabanci Univ, FENS, TR-34956 Istanbul, Turkey", 
      "name": "Gurbuz, Yasar"
    }
  ], 
  "datePublished": "2015-01-01", 
  "description": "This study presents a transmit/receive (T/R) module core chip with 4-bit operation using 0.25 mu m silicon-germanium (SiGe) bi-complementary metal-oxide semiconductor (BiCMOS) technology, for X-band phased array RADAR applications. The T/R module core chip consists of sub-blocks such as low noise amplifier, power amplifier, phase shifter, single-pole double-throw switch and variable gain amplifier. Switches incorporate n-type MOS devices while amplifiers are implemented with SiGe heterojunction bipolar transistors. Measurement results for the complete core chip and its individual sub-blocks are reported here. Between 9 and 10 GHz, the constructed T/R module achieves about 11 dB gain for both receiver (RX) and transmitter (TX) chains, while it has -10.5 dBm receiver chain third-order intermodulation intercept point (IIP3), and 16 dBm OP1 dB for transmitter chain. Root-mean-square phase error is measured as 5, whereas noise figure varies between 4 and 6 dB. The total power dissipation of core chip is about 285 mW, with a total area of 4.9 mm(2).", 
  "headline": "X-band SiGe bi-complementary metal-oxide semiconductor transmit/receive module core chip for phased array RADAR applications", 
  "identifier": 80523, 
  "image": "https://aperta.ulakbim.gov.tr/static/img/logo/aperta_logo_with_icon.svg", 
  "license": "http://www.opendefinition.org/licenses/cc-by", 
  "name": "X-band SiGe bi-complementary metal-oxide semiconductor transmit/receive module core chip for phased array RADAR applications", 
  "url": "https://aperta.ulakbim.gov.tr/record/80523"
}
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