1 Ocak 2015 Dergi makalesi Açık Erişim

Dinc, Tolga; Ozeren, Emre; Caliskan, Can; Kayahan, Huseyin; Gurbuz, Yasar

Citation Style Language JSON

{
  "DOI": "10.1049/iet-map.2014.0224", 
  "abstract": "This study presents a transmit/receive (T/R) module core chip with 4-bit operation using 0.25 mu m silicon-germanium (SiGe) bi-complementary metal-oxide semiconductor (BiCMOS) technology, for X-band phased array RADAR applications. The T/R module core chip consists of sub-blocks such as low noise amplifier, power amplifier, phase shifter, single-pole double-throw switch and variable gain amplifier. Switches incorporate n-type MOS devices while amplifiers are implemented with SiGe heterojunction bipolar transistors. Measurement results for the complete core chip and its individual sub-blocks are reported here. Between 9 and 10 GHz, the constructed T/R module achieves about 11 dB gain for both receiver (RX) and transmitter (TX) chains, while it has -10.5 dBm receiver chain third-order intermodulation intercept point (IIP3), and 16 dBm OP1 dB for transmitter chain. Root-mean-square phase error is measured as 5, whereas noise figure varies between 4 and 6 dB. The total power dissipation of core chip is about 285 mW, with a total area of 4.9 mm(2).", 
  "author": [
    {
      "family": "Dinc", 
      "given": " Tolga"
    }, 
    {
      "family": "Ozeren", 
      "given": " Emre"
    }, 
    {
      "family": "Caliskan", 
      "given": " Can"
    }, 
    {
      "family": "Kayahan", 
      "given": " Huseyin"
    }, 
    {
      "family": "Gurbuz", 
      "given": " Yasar"
    }
  ], 
  "container_title": "IET MICROWAVES ANTENNAS & PROPAGATION", 
  "id": "80523", 
  "issue": "9", 
  "issued": {
    "date-parts": [
      [
        2015, 
        1, 
        1
      ]
    ]
  }, 
  "page": "948-956", 
  "title": "X-band SiGe bi-complementary metal-oxide semiconductor transmit/receive module core chip for phased array RADAR applications", 
  "type": "article-journal", 
  "volume": "9"
}