1 Ocak 2019 Dergi makalesi Açık Erişim

Kurt, Gokhan; Gulseren, Melisa Ekin; Salkim, Gurur; Ural, Sertac; Kayal, Omer Ahmet; Ozturk, Mustafa; Butun, Bayram; Kabak, Mehmet; Ozbay, Ekmel

MARC21 XML

<?xml version='1.0' encoding='UTF-8'?>
<record xmlns="http://www.loc.gov/MARC21/slim">
  <leader>00000nam##2200000uu#4500</leader>
  <datafield tag="700" ind1=" " ind2=" ">
    <subfield code="a">Gulseren, Melisa Ekin</subfield>
    <subfield code="u">Bilkent Univ, Nanotechnol Res Ctr, TR-06800 Ankara, Turkey</subfield>
  </datafield>
  <datafield tag="700" ind1=" " ind2=" ">
    <subfield code="a">Salkim, Gurur</subfield>
    <subfield code="u">Bilkent Univ, Nanotechnol Res Ctr, TR-06800 Ankara, Turkey</subfield>
  </datafield>
  <datafield tag="700" ind1=" " ind2=" ">
    <subfield code="a">Ural, Sertac</subfield>
    <subfield code="u">Bilkent Univ, Nanotechnol Res Ctr, TR-06800 Ankara, Turkey</subfield>
  </datafield>
  <datafield tag="700" ind1=" " ind2=" ">
    <subfield code="a">Kayal, Omer Ahmet</subfield>
    <subfield code="u">Bilkent Univ, Nanotechnol Res Ctr, TR-06800 Ankara, Turkey</subfield>
  </datafield>
  <datafield tag="700" ind1=" " ind2=" ">
    <subfield code="a">Ozturk, Mustafa</subfield>
    <subfield code="u">Bilkent Univ, Nanotechnol Res Ctr, TR-06800 Ankara, Turkey</subfield>
  </datafield>
  <datafield tag="700" ind1=" " ind2=" ">
    <subfield code="a">Butun, Bayram</subfield>
    <subfield code="u">Bilkent Univ, Nanotechnol Res Ctr, TR-06800 Ankara, Turkey</subfield>
  </datafield>
  <datafield tag="700" ind1=" " ind2=" ">
    <subfield code="a">Kabak, Mehmet</subfield>
    <subfield code="u">Ankara Univ, Fac Engn, Dept Engn Phys, TR-06100 Ankara, Turkey</subfield>
  </datafield>
  <datafield tag="700" ind1=" " ind2=" ">
    <subfield code="a">Ozbay, Ekmel</subfield>
  </datafield>
  <datafield tag="909" ind1="C" ind2="4">
    <subfield code="p">IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY</subfield>
    <subfield code="v">7</subfield>
    <subfield code="n">1</subfield>
    <subfield code="c">351-357</subfield>
  </datafield>
  <datafield tag="980" ind1=" " ind2=" ">
    <subfield code="a">user-tubitak-destekli-proje-yayinlari</subfield>
  </datafield>
  <datafield tag="540" ind1=" " ind2=" ">
    <subfield code="a">Creative Commons Attribution</subfield>
    <subfield code="u">http://www.opendefinition.org/licenses/cc-by</subfield>
  </datafield>
  <datafield tag="024" ind1=" " ind2=" ">
    <subfield code="a">10.1109/JEDS.2019.2899387</subfield>
    <subfield code="2">doi</subfield>
  </datafield>
  <datafield tag="245" ind1=" " ind2=" ">
    <subfield code="a">Investigation of a Hybrid Approach for Normally-Off GaN HEMTs Using Fluorine Treatment and Recess Etch Techniques</subfield>
  </datafield>
  <datafield tag="100" ind1=" " ind2=" ">
    <subfield code="a">Kurt, Gokhan</subfield>
  </datafield>
  <datafield tag="909" ind1="C" ind2="O">
    <subfield code="o">oai:zenodo.org:72091</subfield>
    <subfield code="p">user-tubitak-destekli-proje-yayinlari</subfield>
  </datafield>
  <datafield tag="650" ind1="1" ind2="7">
    <subfield code="2">opendefinition.org</subfield>
    <subfield code="a">cc-by</subfield>
  </datafield>
  <datafield tag="260" ind1=" " ind2=" ">
    <subfield code="c">2019-01-01</subfield>
  </datafield>
  <datafield tag="856" ind1="4" ind2=" ">
    <subfield code="u">https://aperta.ulakbim.gov.trrecord/72091/files/bib-c82e401b-6ded-411f-a1fd-af050e1ee279.txt</subfield>
    <subfield code="z">md5:364bad10f2171c77c9154f731b97b7d4</subfield>
    <subfield code="s">285</subfield>
  </datafield>
  <datafield tag="542" ind1=" " ind2=" ">
    <subfield code="l">open</subfield>
  </datafield>
  <controlfield tag="005">20210316033830.0</controlfield>
  <controlfield tag="001">72091</controlfield>
  <datafield tag="980" ind1=" " ind2=" ">
    <subfield code="a">publication</subfield>
    <subfield code="b">article</subfield>
  </datafield>
  <datafield tag="520" ind1=" " ind2=" ">
    <subfield code="a">A hybrid approach for obtaining normally off high electron mobility transistors (HEMTs) combining fluorine treatment, recess etch techniques, and AlGaN buffer was studied. The effects of process variations (recess etch depth and fluorine treatment duration) and epitaxial differences (AlGaN and carbon doped GaN buffers) on the DC characteristics of the normally off HEMTs were investigated. Two different epitaxial structures and three different process variations were compared. Epitaxial structures prepared with an AlGaN buffer showed a higher threshold voltage (V-th = +3.59 V) than those prepared with a GaN buffer (V-th = + 1.85 V).</subfield>
  </datafield>
</record>