1 Ocak 2019 Dergi makalesi Açık Erişim

Kurt, Gokhan; Gulseren, Melisa Ekin; Salkim, Gurur; Ural, Sertac; Kayal, Omer Ahmet; Ozturk, Mustafa; Butun, Bayram; Kabak, Mehmet; Ozbay, Ekmel

JSON-LD (schema.org)

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  "@context": "https://schema.org/", 
  "@id": 72091, 
  "@type": "ScholarlyArticle", 
  "creator": [
    {
      "@type": "Person", 
      "name": "Kurt, Gokhan"
    }, 
    {
      "@type": "Person", 
      "affiliation": "Bilkent Univ, Nanotechnol Res Ctr, TR-06800 Ankara, Turkey", 
      "name": "Gulseren, Melisa Ekin"
    }, 
    {
      "@type": "Person", 
      "affiliation": "Bilkent Univ, Nanotechnol Res Ctr, TR-06800 Ankara, Turkey", 
      "name": "Salkim, Gurur"
    }, 
    {
      "@type": "Person", 
      "affiliation": "Bilkent Univ, Nanotechnol Res Ctr, TR-06800 Ankara, Turkey", 
      "name": "Ural, Sertac"
    }, 
    {
      "@type": "Person", 
      "affiliation": "Bilkent Univ, Nanotechnol Res Ctr, TR-06800 Ankara, Turkey", 
      "name": "Kayal, Omer Ahmet"
    }, 
    {
      "@type": "Person", 
      "affiliation": "Bilkent Univ, Nanotechnol Res Ctr, TR-06800 Ankara, Turkey", 
      "name": "Ozturk, Mustafa"
    }, 
    {
      "@type": "Person", 
      "affiliation": "Bilkent Univ, Nanotechnol Res Ctr, TR-06800 Ankara, Turkey", 
      "name": "Butun, Bayram"
    }, 
    {
      "@type": "Person", 
      "affiliation": "Ankara Univ, Fac Engn, Dept Engn Phys, TR-06100 Ankara, Turkey", 
      "name": "Kabak, Mehmet"
    }, 
    {
      "@type": "Person", 
      "name": "Ozbay, Ekmel"
    }
  ], 
  "datePublished": "2019-01-01", 
  "description": "A hybrid approach for obtaining normally off high electron mobility transistors (HEMTs) combining fluorine treatment, recess etch techniques, and AlGaN buffer was studied. The effects of process variations (recess etch depth and fluorine treatment duration) and epitaxial differences (AlGaN and carbon doped GaN buffers) on the DC characteristics of the normally off HEMTs were investigated. Two different epitaxial structures and three different process variations were compared. Epitaxial structures prepared with an AlGaN buffer showed a higher threshold voltage (V-th = +3.59 V) than those prepared with a GaN buffer (V-th = + 1.85 V).", 
  "headline": "Investigation of a Hybrid Approach for Normally-Off GaN HEMTs Using Fluorine Treatment and Recess Etch Techniques", 
  "identifier": 72091, 
  "image": "https://aperta.ulakbim.gov.tr/static/img/logo/aperta_logo_with_icon.svg", 
  "license": "http://www.opendefinition.org/licenses/cc-by", 
  "name": "Investigation of a Hybrid Approach for Normally-Off GaN HEMTs Using Fluorine Treatment and Recess Etch Techniques", 
  "url": "https://aperta.ulakbim.gov.tr/record/72091"
}