1 Ocak 2019 Dergi makalesi Açık Erişim

Kurt, Gokhan; Gulseren, Melisa Ekin; Ghobadi, Turkan Gamze Ulusoy; Ural, Sertac; Kayal, Omer Ahmet; Ozturk, Mustafa; Butun, Bayram; Kabak, Mehmet; Ozbay, Ekmel

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{
  "@context": "https://schema.org/", 
  "@id": 70709, 
  "@type": "ScholarlyArticle", 
  "creator": [
    {
      "@type": "Person", 
      "name": "Kurt, Gokhan"
    }, 
    {
      "@type": "Person", 
      "name": "Gulseren, Melisa Ekin"
    }, 
    {
      "@type": "Person", 
      "name": "Ghobadi, Turkan Gamze Ulusoy"
    }, 
    {
      "@type": "Person", 
      "affiliation": "Bilkent Univ, Nanotechnol Res Ctr, TR-06800 Ankara, Turkey", 
      "name": "Ural, Sertac"
    }, 
    {
      "@type": "Person", 
      "affiliation": "Bilkent Univ, Nanotechnol Res Ctr, TR-06800 Ankara, Turkey", 
      "name": "Kayal, Omer Ahmet"
    }, 
    {
      "@type": "Person", 
      "affiliation": "Bilkent Univ, Nanotechnol Res Ctr, TR-06800 Ankara, Turkey", 
      "name": "Ozturk, Mustafa"
    }, 
    {
      "@type": "Person", 
      "affiliation": "Bilkent Univ, Nanotechnol Res Ctr, TR-06800 Ankara, Turkey", 
      "name": "Butun, Bayram"
    }, 
    {
      "@type": "Person", 
      "affiliation": "Ankara Univ, Dept Engn Phys, Fac Engn, TR-06100 Ankara, Turkey", 
      "name": "Kabak, Mehmet"
    }, 
    {
      "@type": "Person", 
      "name": "Ozbay, Ekmel"
    }
  ], 
  "datePublished": "2019-01-01", 
  "description": "We demonstrate the electrical performances of an AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT) with low gate leakage current (I-g). A low gate leakage current as low as the order of 10(-11) A/mm was achieved from normally-off MIS-HEMT device (V-th = 2.16 V) with a partially recessed gate, fluorine treatment, and ALD Al2O3 gate dielectric layer. The gate leakage current decrease is attributed to the pre-treatment of the gate region with hydrofluoric acid (HF) and deionized water (DI) solution, which acts to remove the native oxide layer and thus decrease interface traps. X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) analyses demonstrate that the AlGaN surfaces are modified such that the surface roughness and native oxide introduced by the treatments used to achieve normally-off operation are remedied with the use of the pre-treatment.", 
  "headline": "Normally-off AlGaN/GaN MIS-HEMT with low gate leakage current using a hydrofluoric acid pre-treatment", 
  "identifier": 70709, 
  "image": "https://aperta.ulakbim.gov.tr/static/img/logo/aperta_logo_with_icon.svg", 
  "license": "http://www.opendefinition.org/licenses/cc-by", 
  "name": "Normally-off AlGaN/GaN MIS-HEMT with low gate leakage current using a hydrofluoric acid pre-treatment", 
  "url": "https://aperta.ulakbim.gov.tr/record/70709"
}