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Normally-off AlGaN/GaN MIS-HEMT with low gate leakage current using a hydrofluoric acid pre-treatment

Kurt, Gokhan; Gulseren, Melisa Ekin; Ghobadi, Turkan Gamze Ulusoy; Ural, Sertac; Kayal, Omer Ahmet; Ozturk, Mustafa; Butun, Bayram; Kabak, Mehmet; Ozbay, Ekmel


BibTeX

@article{kurt_gokhan_2019_70709,
  author       = {Kurt, Gokhan and
                  Gulseren, Melisa Ekin and
                  Ghobadi, Turkan Gamze Ulusoy and
                  Ural, Sertac and
                  Kayal, Omer Ahmet and
                  Ozturk, Mustafa and
                  Butun, Bayram and
                  Kabak, Mehmet and
                  Ozbay, Ekmel},
  title        = {{Normally-off AlGaN/GaN MIS-HEMT with low gate 
                   leakage current using a hydrofluoric acid pre-
                   treatment}},
  journal      = {SOLID-STATE ELECTRONICS},
  year         = 2019,
  volume       = 158,
  pages        = {22-27},
  month        = jan,
}
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