1 Ocak 2019 Dergi makalesi Açık Erişim

Vakhitov, I. R.; Shemukhin, A. A.; Gumarov, A., I; Lyadov, N. M.; Nuzhdin, V., I; Faizrakhmanov, I. A.; Okay, C.; Rameev, B. Z.; Tagirov, L. R.; Khaibullin, R., I

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  <identifier identifierType="URL">https://aperta.ulakbim.gov.tr/record/67983</identifier>
  <creators>
    <creator>
      <creatorName>Vakhitov, I. R.</creatorName>
      <givenName>I. R.</givenName>
      <familyName>Vakhitov</familyName>
      <affiliation>Kazan Fed Univ, Inst Phys, Kazan, Russia</affiliation>
    </creator>
    <creator>
      <creatorName>Shemukhin, A. A.</creatorName>
      <givenName>A. A.</givenName>
      <familyName>Shemukhin</familyName>
      <affiliation>Lomonosov Moscow State Univ, Skobeltsyn Inst Nucl Phys, Moscow, Russia</affiliation>
    </creator>
    <creator>
      <creatorName>Gumarov, A., I</creatorName>
      <affiliation>Kazan Fed Univ, Inst Phys, Kazan, Russia</affiliation>
    </creator>
    <creator>
      <creatorName>Lyadov, N. M.</creatorName>
      <givenName>N. M.</givenName>
      <familyName>Lyadov</familyName>
      <affiliation>RAS, Zavoisky Phys Tech Inst, FRC Kazan Sci Ctr, Kazan, Russia</affiliation>
    </creator>
    <creator>
      <creatorName>Nuzhdin, V., I</creatorName>
      <affiliation>RAS, Zavoisky Phys Tech Inst, FRC Kazan Sci Ctr, Kazan, Russia</affiliation>
    </creator>
    <creator>
      <creatorName>Faizrakhmanov, I. A.</creatorName>
      <givenName>I. A.</givenName>
      <familyName>Faizrakhmanov</familyName>
      <affiliation>RAS, Zavoisky Phys Tech Inst, FRC Kazan Sci Ctr, Kazan, Russia</affiliation>
    </creator>
    <creator>
      <creatorName>Okay, C.</creatorName>
      <givenName>C.</givenName>
      <familyName>Okay</familyName>
      <affiliation>Marmara Univ, Istanbul, Turkey</affiliation>
    </creator>
    <creator>
      <creatorName>Rameev, B. Z.</creatorName>
      <givenName>B. Z.</givenName>
      <familyName>Rameev</familyName>
    </creator>
    <creator>
      <creatorName>Tagirov, L. R.</creatorName>
      <givenName>L. R.</givenName>
      <familyName>Tagirov</familyName>
    </creator>
    <creator>
      <creatorName>Khaibullin, R., I</creatorName>
      <affiliation>RAS, Zavoisky Phys Tech Inst, FRC Kazan Sci Ctr, Kazan, Russia</affiliation>
    </creator>
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  <titles>
    <title>Structural And Magnetic Studies Of Tio2 Rutile Implanted With Vanadium Ions</title>
  </titles>
  <publisher>Aperta</publisher>
  <publicationYear>2019</publicationYear>
  <dates>
    <date dateType="Issued">2019-01-01</date>
  </dates>
  <resourceType resourceTypeGeneral="Text">Journal article</resourceType>
  <alternateIdentifiers>
    <alternateIdentifier alternateIdentifierType="url">https://aperta.ulakbim.gov.tr/record/67983</alternateIdentifier>
  </alternateIdentifiers>
  <relatedIdentifiers>
    <relatedIdentifier relatedIdentifierType="DOI" relationType="IsIdenticalTo">10.1088/2053-1591/ab447e</relatedIdentifier>
  </relatedIdentifiers>
  <rightsList>
    <rights rightsURI="http://www.opendefinition.org/licenses/cc-by">Creative Commons Attribution</rights>
    <rights rightsURI="info:eu-repo/semantics/openAccess">Open Access</rights>
  </rightsList>
  <descriptions>
    <description descriptionType="Abstract">Single crystal (100) and (001) TiO2 rutile plates were implanted with vanadium 40 keV ions to the fluence of 1.5 x 10(17) ion cm(-2). A set of samples was also annealed at high-temperature in air to restore oxygen stoichiometric content and recover the TiO2 lattice structure after the high-dose ion implantation. In addition, a control set of TiO2 rutile plates was implanted with 40 keV argon ions to the same fluence to explore the effect of radiation-induced defects on magnetic properties. Rutherford backscattering spectroscopy (RBS), x-ray photoelectron spectroscopy (XPS) and vibrating sample magnetometry (VSM) measurements were carried out to characterize the structural and magnetic properties of the vanadium-implanted TiO2. Both as-implanted and subsequently annealed V-TiO2 samples reveal ferromagnetic response at room temperature. Strong ferromagnetism observed in the vanadium-implanted (001) TiO2 plates is related to the \substitutional V4+ ions coupled by the indirect exchange via electrons trapped at oxygen vacancies, while much weaker ferromagnetism in the (100)oriented plates and the Ar-implanted samples is attributed to lattice defects induced by the high-dose ion irradiation. Suppression of the ferromagnetic response in the vanadium-implanted (001) TiO2 after the thermal treatment is explained by filling in the oxygen vacancies due to oxygen diffusion during annealing in air atmosphere.</description>
  </descriptions>
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