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Optical gain in 1.3-mu m electrically driven dilute nitride VCSOAs

Lisesivdin, Sefer Bora; Khan, Nadir Ali; Mazzucato, Simone; Balkan, Naci; Adams, Michael John; Korpijarvi, Ville-Markus; Guina, Mircea; Mezosi, Gabor; Sorel, Marc


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<oai_dc:dc xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd">
  <dc:creator>Lisesivdin, Sefer Bora</dc:creator>
  <dc:creator>Khan, Nadir Ali</dc:creator>
  <dc:creator>Mazzucato, Simone</dc:creator>
  <dc:creator>Balkan, Naci</dc:creator>
  <dc:creator>Adams, Michael John</dc:creator>
  <dc:creator>Korpijarvi, Ville-Markus</dc:creator>
  <dc:creator>Guina, Mircea</dc:creator>
  <dc:creator>Mezosi, Gabor</dc:creator>
  <dc:creator>Sorel, Marc</dc:creator>
  <dc:date>2014-01-01</dc:date>
  <dc:description>We report the observation of room-temperature optical gain at 1.3 mu m in electrically driven dilute nitride vertical cavity semiconductor optical amplifiers. The gain is calculated with respect to injected power for samples with and without a confinement aperture. At lower injected powers, a gain of almost 10 dB is observed in both samples. At injection powers over 5 nW, the gain is observed to decrease. For nearly all investigated power levels, the sample with confinement aperture gives slightly higher gain.</dc:description>
  <dc:identifier>https://aperta.ulakbim.gov.trrecord/63383</dc:identifier>
  <dc:identifier>oai:zenodo.org:63383</dc:identifier>
  <dc:rights>info:eu-repo/semantics/openAccess</dc:rights>
  <dc:rights>http://www.opendefinition.org/licenses/cc-by</dc:rights>
  <dc:source>NANOSCALE RESEARCH LETTERS 9</dc:source>
  <dc:title>Optical gain in 1.3-mu m electrically driven dilute nitride VCSOAs</dc:title>
  <dc:type>info:eu-repo/semantics/article</dc:type>
  <dc:type>publication-article</dc:type>
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