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Optical gain in 1.3-mu m electrically driven dilute nitride VCSOAs

Lisesivdin, Sefer Bora; Khan, Nadir Ali; Mazzucato, Simone; Balkan, Naci; Adams, Michael John; Korpijarvi, Ville-Markus; Guina, Mircea; Mezosi, Gabor; Sorel, Marc


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  <identifier identifierType="URL">https://aperta.ulakbim.gov.tr/record/63383</identifier>
  <creators>
    <creator>
      <creatorName>Lisesivdin, Sefer Bora</creatorName>
      <givenName>Sefer Bora</givenName>
      <familyName>Lisesivdin</familyName>
    </creator>
    <creator>
      <creatorName>Khan, Nadir Ali</creatorName>
      <givenName>Nadir Ali</givenName>
      <familyName>Khan</familyName>
    </creator>
    <creator>
      <creatorName>Mazzucato, Simone</creatorName>
      <givenName>Simone</givenName>
      <familyName>Mazzucato</familyName>
      <affiliation>Univ Essex, Sch Comp Sci &amp; Elect Engn, Colchester CO4 3SQ, Essex, England</affiliation>
    </creator>
    <creator>
      <creatorName>Balkan, Naci</creatorName>
      <givenName>Naci</givenName>
      <familyName>Balkan</familyName>
      <affiliation>Univ Essex, Sch Comp Sci &amp; Elect Engn, Colchester CO4 3SQ, Essex, England</affiliation>
    </creator>
    <creator>
      <creatorName>Adams, Michael John</creatorName>
      <givenName>Michael John</givenName>
      <familyName>Adams</familyName>
      <affiliation>Univ Essex, Sch Comp Sci &amp; Elect Engn, Colchester CO4 3SQ, Essex, England</affiliation>
    </creator>
    <creator>
      <creatorName>Korpijarvi, Ville-Markus</creatorName>
      <givenName>Ville-Markus</givenName>
      <familyName>Korpijarvi</familyName>
      <affiliation>Tampere Univ Technol, Optoelect Res Ctr ORC, FIN-33101 Tampere, Finland</affiliation>
    </creator>
    <creator>
      <creatorName>Guina, Mircea</creatorName>
      <givenName>Mircea</givenName>
      <familyName>Guina</familyName>
      <affiliation>Tampere Univ Technol, Optoelect Res Ctr ORC, FIN-33101 Tampere, Finland</affiliation>
    </creator>
    <creator>
      <creatorName>Mezosi, Gabor</creatorName>
      <givenName>Gabor</givenName>
      <familyName>Mezosi</familyName>
      <affiliation>Univ Glasgow, Sch Engn, Glasgow GG12 8QQ, Lanark, Scotland</affiliation>
    </creator>
    <creator>
      <creatorName>Sorel, Marc</creatorName>
      <givenName>Marc</givenName>
      <familyName>Sorel</familyName>
      <affiliation>Univ Glasgow, Sch Engn, Glasgow GG12 8QQ, Lanark, Scotland</affiliation>
    </creator>
  </creators>
  <titles>
    <title>Optical Gain In 1.3-Mu M Electrically Driven Dilute Nitride Vcsoas</title>
  </titles>
  <publisher>Aperta</publisher>
  <publicationYear>2014</publicationYear>
  <dates>
    <date dateType="Issued">2014-01-01</date>
  </dates>
  <resourceType resourceTypeGeneral="Text">Journal article</resourceType>
  <alternateIdentifiers>
    <alternateIdentifier alternateIdentifierType="url">https://aperta.ulakbim.gov.tr/record/63383</alternateIdentifier>
  </alternateIdentifiers>
  <relatedIdentifiers>
    <relatedIdentifier relatedIdentifierType="DOI" relationType="IsIdenticalTo">10.1186/1556-276X-9-22</relatedIdentifier>
  </relatedIdentifiers>
  <rightsList>
    <rights rightsURI="http://www.opendefinition.org/licenses/cc-by">Creative Commons Attribution</rights>
    <rights rightsURI="info:eu-repo/semantics/openAccess">Open Access</rights>
  </rightsList>
  <descriptions>
    <description descriptionType="Abstract">We report the observation of room-temperature optical gain at 1.3 mu m in electrically driven dilute nitride vertical cavity semiconductor optical amplifiers. The gain is calculated with respect to injected power for samples with and without a confinement aperture. At lower injected powers, a gain of almost 10 dB is observed in both samples. At injection powers over 5 nW, the gain is observed to decrease. For nearly all investigated power levels, the sample with confinement aperture gives slightly higher gain.</description>
  </descriptions>
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