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Optical gain in 1.3-mu m electrically driven dilute nitride VCSOAs

   Lisesivdin, Sefer Bora; Khan, Nadir Ali; Mazzucato, Simone; Balkan, Naci; Adams, Michael John; Korpijarvi, Ville-Markus; Guina, Mircea; Mezosi, Gabor; Sorel, Marc

We report the observation of room-temperature optical gain at 1.3 mu m in electrically driven dilute nitride vertical cavity semiconductor optical amplifiers. The gain is calculated with respect to injected power for samples with and without a confinement aperture. At lower injected powers, a gain of almost 10 dB is observed in both samples. At injection powers over 5 nW, the gain is observed to decrease. For nearly all investigated power levels, the sample with confinement aperture gives slightly higher gain.

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