1 Ocak 2018 Dergi makalesi Açık Erişim

Kurudirek, Sinem V.; Kurudirek, Murat; Klein, Benjamin D. B.; Summers, Christopher J.; Hertel, Nolan E.

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  <dc:creator>Kurudirek, Sinem V.</dc:creator>
  <dc:creator>Kurudirek, Murat</dc:creator>
  <dc:creator>Klein, Benjamin D. B.</dc:creator>
  <dc:creator>Summers, Christopher J.</dc:creator>
  <dc:creator>Hertel, Nolan E.</dc:creator>
  <dc:date>2018-01-01</dc:date>
  <dc:description>Gallium doped ZnO nanorods exhibiting good PL performance were grown via a solution method. The as-grown, Ga-doped, and undoped ZnO nanorods displayed a broad yellow-orange emission and a UV emission peak, respectively. By applying an annealing process, the broad yellow-orange emission almost disappeared and the UV emission increased significantly (for ZnO:Ga (1.2%) peak intensity ratio congruent to 56). With Ga doping, the UV emission peak shifted from 3.27 eV to 3.28 eV. Also, experimental results revealed that a sample doped with Ga at 1.2% by mass exhibited a stronger PL intensity than either the undoped ZnO (higher by 57% acc. to peak intensities) sample or a ZnO sample doped with Ga at 2% (higher by 88% acc. to peak intensities). Both doped and undoped samples were also tested as alpha particle scintillators, and similarly the ZnO:Ga (1.2%) nanorods were found to have higher scintillation response than ZnO:Ga (2%) or undoped ZnO.</dc:description>
  <dc:identifier>https://aperta.ulakbim.gov.trrecord/36135</dc:identifier>
  <dc:identifier>oai:zenodo.org:36135</dc:identifier>
  <dc:rights>info:eu-repo/semantics/openAccess</dc:rights>
  <dc:rights>http://www.opendefinition.org/licenses/cc-by</dc:rights>
  <dc:source>NUCLEAR INSTRUMENTS &amp; METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT 904 158-162</dc:source>
  <dc:title>Synthesis and photoluminescence properties of Ga-doped ZnO nanorods by a low temperature solution method</dc:title>
  <dc:type>info:eu-repo/semantics/article</dc:type>
  <dc:type>publication-article</dc:type>
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