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Kurudirek, Sinem V.; Kurudirek, Murat; Klein, Benjamin D. B.; Summers, Christopher J.; Hertel, Nolan E.
{ "@context": "https://schema.org/", "@id": 36135, "@type": "ScholarlyArticle", "creator": [ { "@type": "Person", "name": "Kurudirek, Sinem V." }, { "@type": "Person", "affiliation": "Ataturk Univ, Fac Sci, Dept Phys, TR-25240 Erzurum, Turkey", "name": "Kurudirek, Murat" }, { "@type": "Person", "affiliation": "Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA", "name": "Klein, Benjamin D. B." }, { "@type": "Person", "name": "Summers, Christopher J." }, { "@type": "Person", "affiliation": "Georgia Inst Technol, Nucl & Radiol Engn Program, Atlanta, GA 30332 USA", "name": "Hertel, Nolan E." } ], "datePublished": "2018-01-01", "description": "Gallium doped ZnO nanorods exhibiting good PL performance were grown via a solution method. The as-grown, Ga-doped, and undoped ZnO nanorods displayed a broad yellow-orange emission and a UV emission peak, respectively. By applying an annealing process, the broad yellow-orange emission almost disappeared and the UV emission increased significantly (for ZnO:Ga (1.2%) peak intensity ratio congruent to 56). With Ga doping, the UV emission peak shifted from 3.27 eV to 3.28 eV. Also, experimental results revealed that a sample doped with Ga at 1.2% by mass exhibited a stronger PL intensity than either the undoped ZnO (higher by 57% acc. to peak intensities) sample or a ZnO sample doped with Ga at 2% (higher by 88% acc. to peak intensities). Both doped and undoped samples were also tested as alpha particle scintillators, and similarly the ZnO:Ga (1.2%) nanorods were found to have higher scintillation response than ZnO:Ga (2%) or undoped ZnO.", "headline": "Synthesis and photoluminescence properties of Ga-doped ZnO nanorods by a low temperature solution method", "identifier": 36135, "image": "https://aperta.ulakbim.gov.tr/static/img/logo/aperta_logo_with_icon.svg", "license": "http://www.opendefinition.org/licenses/cc-by", "name": "Synthesis and photoluminescence properties of Ga-doped ZnO nanorods by a low temperature solution method", "url": "https://aperta.ulakbim.gov.tr/record/36135" }
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