1 Ocak 2018 Dergi makalesi Açık Erişim

Kurudirek, Sinem V.; Kurudirek, Murat; Klein, Benjamin D. B.; Summers, Christopher J.; Hertel, Nolan E.

DataCite XML

<?xml version='1.0' encoding='utf-8'?>
<resource xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns="http://datacite.org/schema/kernel-4" xsi:schemaLocation="http://datacite.org/schema/kernel-4 http://schema.datacite.org/meta/kernel-4.1/metadata.xsd">
  <identifier identifierType="URL">https://aperta.ulakbim.gov.tr/record/36135</identifier>
  <creators>
    <creator>
      <creatorName>Kurudirek, Sinem V.</creatorName>
      <givenName>Sinem V.</givenName>
      <familyName>Kurudirek</familyName>
    </creator>
    <creator>
      <creatorName>Kurudirek, Murat</creatorName>
      <givenName>Murat</givenName>
      <familyName>Kurudirek</familyName>
      <affiliation>Ataturk Univ, Fac Sci, Dept Phys, TR-25240 Erzurum, Turkey</affiliation>
    </creator>
    <creator>
      <creatorName>Klein, Benjamin D. B.</creatorName>
      <givenName>Benjamin D. B.</givenName>
      <familyName>Klein</familyName>
      <affiliation>Georgia Inst Technol, Sch Elect &amp; Comp Engn, Atlanta, GA 30332 USA</affiliation>
    </creator>
    <creator>
      <creatorName>Summers, Christopher J.</creatorName>
      <givenName>Christopher J.</givenName>
      <familyName>Summers</familyName>
    </creator>
    <creator>
      <creatorName>Hertel, Nolan E.</creatorName>
      <givenName>Nolan E.</givenName>
      <familyName>Hertel</familyName>
      <affiliation>Georgia Inst Technol, Nucl &amp; Radiol Engn Program, Atlanta, GA 30332 USA</affiliation>
    </creator>
  </creators>
  <titles>
    <title>Synthesis And Photoluminescence Properties Of Ga-Doped Zno Nanorods By A Low Temperature Solution Method</title>
  </titles>
  <publisher>Aperta</publisher>
  <publicationYear>2018</publicationYear>
  <dates>
    <date dateType="Issued">2018-01-01</date>
  </dates>
  <resourceType resourceTypeGeneral="Text">Journal article</resourceType>
  <alternateIdentifiers>
    <alternateIdentifier alternateIdentifierType="url">https://aperta.ulakbim.gov.tr/record/36135</alternateIdentifier>
  </alternateIdentifiers>
  <relatedIdentifiers>
    <relatedIdentifier relatedIdentifierType="DOI" relationType="IsIdenticalTo">10.1016/j.nima.2018.07.038</relatedIdentifier>
  </relatedIdentifiers>
  <rightsList>
    <rights rightsURI="http://www.opendefinition.org/licenses/cc-by">Creative Commons Attribution</rights>
    <rights rightsURI="info:eu-repo/semantics/openAccess">Open Access</rights>
  </rightsList>
  <descriptions>
    <description descriptionType="Abstract">Gallium doped ZnO nanorods exhibiting good PL performance were grown via a solution method. The as-grown, Ga-doped, and undoped ZnO nanorods displayed a broad yellow-orange emission and a UV emission peak, respectively. By applying an annealing process, the broad yellow-orange emission almost disappeared and the UV emission increased significantly (for ZnO:Ga (1.2%) peak intensity ratio congruent to 56). With Ga doping, the UV emission peak shifted from 3.27 eV to 3.28 eV. Also, experimental results revealed that a sample doped with Ga at 1.2% by mass exhibited a stronger PL intensity than either the undoped ZnO (higher by 57% acc. to peak intensities) sample or a ZnO sample doped with Ga at 2% (higher by 88% acc. to peak intensities). Both doped and undoped samples were also tested as alpha particle scintillators, and similarly the ZnO:Ga (1.2%) nanorods were found to have higher scintillation response than ZnO:Ga (2%) or undoped ZnO.</description>
  </descriptions>
</resource>