1 Ocak 2021 Dergi makalesi Açık Erişim

Kiziloglu, Volkan; Navruz, Tugba Selcen; Saritas, Muzeyyen

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  <dc:creator>Kiziloglu, Volkan</dc:creator>
  <dc:creator>Navruz, Tugba Selcen</dc:creator>
  <dc:creator>Saritas, Muzeyyen</dc:creator>
  <dc:date>2021-01-01</dc:date>
  <dc:description>Intermediate-band solar cells, IBSCs, with single IB provide better utilization of the solar spectrum than single junction solar cells. In this study, Model B IBSC was proposed, investigated and compared with previously used two models named here as Model A and Model C respectively. Detailed Balance Model was applied to satisfy Current Balance Equations with the optimum photo filling of IB states in Model B. Optimum design parameters were obtained using 104 cm-1 of band-to-band absorption coefficient, alpha, in the wide range of band gap materials, overlapping absorption, photo filling, f, of IB states, capture cross-section ratio of carriers, concentration of IB states, and IB layer thickness, w, under 1-46,000 sun concentration, X. Maximum limiting efficiency value of 63.2% has been obtained with 1.95 eV of band gap, for f alpha w &gt;= 5 and 46,000X, under non-overlapping absorption. The peak efficiency of Model B was 16% over the Model A and 8% over the Model C, for equal capture cross sections under large overlapping. The peak efficiency of Model B was 35% over Model A, at large non-equal capture cross-sections and large overlapping. Results predicted that the materials in the wide range of band gaps could be good candidates for fabricating IBSCs using Model B with an efficiency of 50% or above at lower sun concentration, 10,000X, even under large overlapping.</dc:description>
  <dc:identifier>https://aperta.ulakbim.gov.trrecord/231134</dc:identifier>
  <dc:identifier>oai:aperta.ulakbim.gov.tr:231134</dc:identifier>
  <dc:rights>info:eu-repo/semantics/openAccess</dc:rights>
  <dc:rights>http://www.opendefinition.org/licenses/cc-by</dc:rights>
  <dc:source>OPTIK 225</dc:source>
  <dc:title>Comparison of three IBSCs in terms of photo-filling, capture cross section of carriers, the concentration of IB states and overlapping of absorption coefficients in the wide range of band gaps including GaAs</dc:title>
  <dc:type>info:eu-repo/semantics/article</dc:type>
  <dc:type>publication-article</dc:type>
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