1 Ocak 2021 Dergi makalesi Açık Erişim

Kiziloglu, Volkan; Navruz, Tugba Selcen; Saritas, Muzeyyen

Citation Style Language JSON

{
  "DOI": "10.1016/j.ijleo.2020.165680", 
  "abstract": "Intermediate-band solar cells, IBSCs, with single IB provide better utilization of the solar spectrum than single junction solar cells. In this study, Model B IBSC was proposed, investigated and compared with previously used two models named here as Model A and Model C respectively. Detailed Balance Model was applied to satisfy Current Balance Equations with the optimum photo filling of IB states in Model B. Optimum design parameters were obtained using 104 cm-1 of band-to-band absorption coefficient, alpha, in the wide range of band gap materials, overlapping absorption, photo filling, f, of IB states, capture cross-section ratio of carriers, concentration of IB states, and IB layer thickness, w, under 1-46,000 sun concentration, X. Maximum limiting efficiency value of 63.2% has been obtained with 1.95 eV of band gap, for f alpha w >= 5 and 46,000X, under non-overlapping absorption. The peak efficiency of Model B was 16% over the Model A and 8% over the Model C, for equal capture cross sections under large overlapping. The peak efficiency of Model B was 35% over Model A, at large non-equal capture cross-sections and large overlapping. Results predicted that the materials in the wide range of band gaps could be good candidates for fabricating IBSCs using Model B with an efficiency of 50% or above at lower sun concentration, 10,000X, even under large overlapping.", 
  "author": [
    {
      "family": "Kiziloglu", 
      "given": " Volkan"
    }, 
    {
      "family": "Navruz", 
      "given": " Tugba Selcen"
    }, 
    {
      "family": "Saritas", 
      "given": " Muzeyyen"
    }
  ], 
  "container_title": "OPTIK", 
  "id": "231134", 
  "issued": {
    "date-parts": [
      [
        2021, 
        1, 
        1
      ]
    ]
  }, 
  "title": "Comparison of three IBSCs in terms of photo-filling, capture cross section of carriers, the concentration of IB states and overlapping of absorption coefficients in the wide range of band gaps including GaAs", 
  "type": "article-journal", 
  "volume": "225"
}