1 Ocak 2021 Dergi makalesi Açık Erişim

Kiziloglu, Volkan; Navruz, Tugba Selcen; Saritas, Muzeyyen

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        "affiliation": "Gazi Univ, Fac Engn, Dept Elect & Elect Engn, TR-06570 Ankara, Turkey", 
        "name": "Kiziloglu, Volkan"
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      {
        "affiliation": "Gazi Univ, Fac Engn, Dept Elect & Elect Engn, TR-06570 Ankara, Turkey", 
        "name": "Navruz, Tugba Selcen"
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      {
        "affiliation": "Gazi Univ, Fac Engn, Dept Elect & Elect Engn, TR-06570 Ankara, Turkey", 
        "name": "Saritas, Muzeyyen"
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    "description": "Intermediate-band solar cells, IBSCs, with single IB provide better utilization of the solar spectrum than single junction solar cells. In this study, Model B IBSC was proposed, investigated and compared with previously used two models named here as Model A and Model C respectively. Detailed Balance Model was applied to satisfy Current Balance Equations with the optimum photo filling of IB states in Model B. Optimum design parameters were obtained using 104 cm-1 of band-to-band absorption coefficient, alpha, in the wide range of band gap materials, overlapping absorption, photo filling, f, of IB states, capture cross-section ratio of carriers, concentration of IB states, and IB layer thickness, w, under 1-46,000 sun concentration, X. Maximum limiting efficiency value of 63.2% has been obtained with 1.95 eV of band gap, for f alpha w >= 5 and 46,000X, under non-overlapping absorption. The peak efficiency of Model B was 16% over the Model A and 8% over the Model C, for equal capture cross sections under large overlapping. The peak efficiency of Model B was 35% over Model A, at large non-equal capture cross-sections and large overlapping. Results predicted that the materials in the wide range of band gaps could be good candidates for fabricating IBSCs using Model B with an efficiency of 50% or above at lower sun concentration, 10,000X, even under large overlapping.", 
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    "title": "Comparison of three IBSCs in terms of photo-filling, capture cross section of carriers, the concentration of IB states and overlapping of absorption coefficients in the wide range of band gaps including GaAs"
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