Dergi makalesi Açık Erişim
Colak, Hakan; Karakose, Ercan
<?xml version='1.0' encoding='utf-8'?> <oai_dc:dc xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd"> <dc:creator>Colak, Hakan</dc:creator> <dc:creator>Karakose, Ercan</dc:creator> <dc:date>2021-01-01</dc:date> <dc:description>In this study, the impacts of doping concentration on the crystal structure, morphology, electrical, and optical properties of Ho3+-doped zinc oxide (ZnO) nanorod (NR) arrays were studied. Structural and morphological characterizations showed that the Ho3+-doped ZnO NRs were crystallized in the (002) direction, and that they had a homogeneous distribution on the substrate. The crystallite sizes of the samples were between 50 nm and 65 nm. SEM analysis showed that every sample was hexagonal in shape. For the 1 and 5 mol.% Ho3+-doped ZnO NRs, the values for electrical conductivity were found to be 1.41 x 10(-7) and 8.29 x 10(-6) (omega cm)(-1) at 25 degrees C and 1.70 x 10(-5) and 1.24 x 10(-3) (omega cm)(-1) at 300 degrees C, respectively. The optical transmittances were between 80 and 93% for all the samples in the region from 400 to 1000 nm. The optical band gap values were determined to be between 3.180 and 3.195 eV.</dc:description> <dc:identifier>https://aperta.ulakbim.gov.trrecord/7705</dc:identifier> <dc:identifier>oai:zenodo.org:7705</dc:identifier> <dc:rights>info:eu-repo/semantics/openAccess</dc:rights> <dc:rights>http://www.opendefinition.org/licenses/cc-by</dc:rights> <dc:source>JOM 73(1) 395-403</dc:source> <dc:title>Electrical and Optical Properties of Well-Aligned Ho3+-Doped ZnO Nanorods as an Alternative Transparent Conducting Oxide</dc:title> <dc:type>info:eu-repo/semantics/article</dc:type> <dc:type>publication-article</dc:type> </oai_dc:dc>
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