1 Ocak 2018 Dergi makalesi Açık Erişim

Sonmez, Bedri Gurkan; Ertop, Ozan; Mutlu, Senol

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        "affiliation": "Bogazici Univ, Dept Elect & Elect Engn, TR-34342 Istanbul, Turkey", 
        "name": "Sonmez, Bedri Gurkan"
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      {
        "affiliation": "Bogazici Univ, Dept Elect & Elect Engn, TR-34342 Istanbul, Turkey", 
        "name": "Ertop, Ozan"
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      {
        "affiliation": "Bogazici Univ, Dept Elect & Elect Engn, TR-34342 Istanbul, Turkey", 
        "name": "Mutlu, Senol"
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    "description": "We present AC modeling of WG-FET devices based on gate probe distance. Small- and large-signal models are proposed. It is shown that unity gain frequency is inversely proportional to gate distance. Also, common source amplifier, inverter, and ring oscillator circuits are fabricated with WG-FET devices, which use 16 nm-thick mono-Si film as channel layer, for the first time. Circuit simulations are performed based on AC models. Results are verified with experimental measurements using de-ionized (DI) water. For common source amplifier, f(UG) is measured as 21 Hz for 2 mm gate distance, and it is increased to 1.2 kHz when gate distance is decreased to 200 mu m. For inverter, rail-to-rail operation is observed with t(PLH) of 24ms and t(PLH) of 58ms for 1 V-pp square-wave input signal at 1 Hz. Gain is measured as -11 V/V at switching threshold. Ring oscillator is realized with live inverters. A square-wave output signal with amplitude of 840 mV(pp) and frequency of 2.6 Hz is obtained. AC modeling of WG-FET enables realization of advanced circuits which are inherently compatible with fluidic systems. Therefore, they can be valuable assets especially in microfluidic applications.", 
    "doi": "10.1088/1361-6439/aae39e", 
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      "issue": "11", 
      "title": "JOURNAL OF MICROMECHANICS AND MICROENGINEERING", 
      "volume": "28"
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    "publication_date": "2018-01-01", 
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    "title": "Realization and AC modeling of electronic circuits with water-gated field effect transistors (WG-FETs) based on gate probe distance"
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