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Realization and AC modeling of electronic circuits with water-gated field effect transistors (WG-FETs) based on gate probe distance

2018    Sonmez, Bedri Gurkan; Ertop, Ozan; Mutlu, Senol

We present AC modeling of WG-FET devices based on gate probe distance. Small- and large-signal models are proposed. It is shown that unity gain frequency is inversely proportional to gate distance. Also, common source amplifier, inverter, and ring oscillator circuits are fabricated with WG-FET devices, which use 16 nm-thick mono-Si film as channel layer, for the first time. Circuit simulations are performed based on AC models. Results are verified with experimental measurements using de-ionized (DI) water. For common source amplifier, f(UG) is measured as 21 Hz for 2 mm gate distance, and it is increased to 1.2 kHz when gate distance is decreased to 200 mu m. For inverter, rail-to-rail operation is observed with t(PLH) of 24ms and t(PLH) of 58ms for 1 V-pp square-wave input signal at 1 Hz. Gain is measured as -11 V/V at switching threshold. Ring oscillator is realized with live inverters. A square-wave output signal with amplitude of 840 mV(pp) and frequency of 2.6 Hz is obtained. AC modeling of WG-FET enables realization of advanced circuits which are inherently compatible with fluidic systems. Therefore, they can be valuable assets especially in microfluidic applications.