1 Ocak 2024 Dergi makalesi Açık Erişim

Guclu, Cigdem Sukriye; Ulusoy, Murat; Altindal, Semsettin

Dublin Core

<?xml version='1.0' encoding='utf-8'?>
<oai_dc:dc xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd">
  <dc:creator>Guclu, Cigdem Sukriye</dc:creator>
  <dc:creator>Ulusoy, Murat</dc:creator>
  <dc:creator>Altindal, Semsettin</dc:creator>
  <dc:date>2024-01-01</dc:date>
  <dc:description>In this study, both the Au/(pure-PVA)/n-Si (MPS-1) and Au/(CdTe:PVA)/n-Si (MPS-2) type Schottky diodes (SDs) were fabricated onto the same n-Si wafer in same conditions. After that, their electrical parameters were obtained from the current-voltage (I-V) and capacitance-voltage (C-V) measurements and compared to each other to determine the effect (CdTe:PVA) interlayer on the performance of MPS type SD. The saturation current (I-s), ideality factor (n), rectification ratio (RR = I-for./I-rev.), zero-bias barrier height (Phi(Bo)), and series/shunt resistances (R-s, R-sh) were derived utilizing I-V data. The values of I-o, n, and Phi(Bo) were found as 9.13 x 10(-7) A, 11.07, 0.63 eV for MPS1 and 1.54 x 10(-10) A, 3.97, 0.85 eV for MPS2, respectively. The C-2-V graphs were drawn for 0.7 MHz to obtain the doping concentration of donor atoms (N-D), Fermi energy (E-F), BH/(Phi(B)(C-V)), depletion layer width (W-D), and maximum electric field (E-m). The N-ss - (E-c - E-ss) profile for two SDs was produced from the I-V data by considering the voltage dependence of n and BH. The values of surface states (N-ss) were changed between 4.8 x 10(13) and 1.7 x 10(14) eV(-1) cm(-2) for MPS1 and 5 x 10(12) and 1.15 x 10(13) eV(-1) cm(-2) for MPS2, respectively. All experimental results show that the (CdTe:PVA) interlayer significantly improved the quality of the MS type SDs rather than (pure-PVA) in terms of lower values of leakage/saturation current, n, N-ss, and higher RR, BH, and R-sh when compared (pure-PVA) interlayer. The (CdTe:PVA) interlayer may be used instead of the conventional interlayer in the future.</dc:description>
  <dc:identifier>https://aperta.ulakbim.gov.trrecord/279585</dc:identifier>
  <dc:identifier>oai:aperta.ulakbim.gov.tr:279585</dc:identifier>
  <dc:rights>info:eu-repo/semantics/openAccess</dc:rights>
  <dc:rights>http://www.opendefinition.org/licenses/cc-by</dc:rights>
  <dc:source>JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 35(12) 10</dc:source>
  <dc:title>A comparison electrical characteristics of the Au/(pure-PVA)/n-Si and Au/(CdTe doped-PVA)/n-Si (MPS) type Schottky structures using &lt;i&gt;I-V&lt;/i&gt; and &lt;i&gt;C-V&lt;/i&gt; measurements</dc:title>
  <dc:type>info:eu-repo/semantics/article</dc:type>
  <dc:type>publication-article</dc:type>
</oai_dc:dc>