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A comparison electrical characteristics of the Au/(pure-PVA)/n-Si and Au/(CdTe doped-PVA)/n-Si (MPS) type Schottky structures using <i>I-V</i> and <i>C-V</i> measurements

2024    Guclu, Cigdem Sukriye; Ulusoy, Murat; Altindal, Semsettin

In this study, both the Au/(pure-PVA)/n-Si (MPS-1) and Au/(CdTe:PVA)/n-Si (MPS-2) type Schottky diodes (SDs) were fabricated onto the same n-Si wafer in same conditions. After that, their electrical parameters were obtained from the current-voltage (I-V) and capacitance-voltage (C-V) measurements and compared to each other to determine the effect (CdTe:PVA) interlayer on the performance of MPS type SD. The saturation current (I-s), ideality factor (n), rectification ratio (RR = I-for./I-rev.), zero-bias barrier height (Phi(Bo)), and series/shunt resistances (R-s, R-sh) were derived utilizing I-V data. The values of I-o, n, and Phi(Bo) were found as 9.13 x 10(-7) A, 11.07, 0.63 eV for MPS1 and 1.54 x 10(-10) A, 3.97, 0.85 eV for MPS2, respectively. The C-2-V graphs were drawn for 0.7 MHz to obtain the doping concentration of donor atoms (N-D), Fermi energy (E-F), BH/(Phi(B)(C-V)), depletion layer width (W-D), and maximum electric field (E-m). The N-ss - (E-c - E-ss) profile for two SDs was produced from the I-V data by considering the voltage dependence of n and BH. The values of surface states (N-ss) were changed between 4.8 x 10(13) and 1.7 x 10(14) eV(-1) cm(-2) for MPS1 and 5 x 10(12) and 1.15 x 10(13) eV(-1) cm(-2) for MPS2, respectively. All experimental results show that the (CdTe:PVA) interlayer significantly improved the quality of the MS type SDs rather than (pure-PVA) in terms of lower values of leakage/saturation current, n, N-ss, and higher RR, BH, and R-sh when compared (pure-PVA) interlayer. The (CdTe:PVA) interlayer may be used instead of the conventional interlayer in the future.