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The effect of strain and spatial Bi distribution on the band alignment of GaAsBi single quantum well structure

Gunes, M.; Donmez, O.; Gumus, C.; Erol, A.; Alghamdi, H.; Alhassan, S.; Alhassni, A.; Alotaibi, S.; Schmidbauer, M.; Galeti, H. V. A.; Henini, M.


MARC21 XML

<?xml version='1.0' encoding='UTF-8'?>
<record xmlns="http://www.loc.gov/MARC21/slim">
  <leader>00000nam##2200000uu#4500</leader>
  <datafield tag="700" ind1=" " ind2=" ">
    <subfield code="a">Donmez, O.</subfield>
    <subfield code="u">Istanbul Univ, Fac Sci, Dept Phys, TR-34134 Istanbul, Turkey</subfield>
  </datafield>
  <datafield tag="700" ind1=" " ind2=" ">
    <subfield code="a">Gumus, C.</subfield>
    <subfield code="u">Cukurova Univ, Phys Dept, TR-01330 Adana, Turkey</subfield>
  </datafield>
  <datafield tag="700" ind1=" " ind2=" ">
    <subfield code="a">Erol, A.</subfield>
    <subfield code="u">Istanbul Univ, Fac Sci, Dept Phys, TR-34134 Istanbul, Turkey</subfield>
  </datafield>
  <datafield tag="700" ind1=" " ind2=" ">
    <subfield code="a">Alghamdi, H.</subfield>
    <subfield code="u">Univ Nottingham, Sch Phys &amp; Astron, Nottingham, England</subfield>
  </datafield>
  <datafield tag="700" ind1=" " ind2=" ">
    <subfield code="a">Alhassan, S.</subfield>
    <subfield code="u">Univ Nottingham, Sch Phys &amp; Astron, Nottingham, England</subfield>
  </datafield>
  <datafield tag="700" ind1=" " ind2=" ">
    <subfield code="a">Alhassni, A.</subfield>
    <subfield code="u">Univ Nottingham, Sch Phys &amp; Astron, Nottingham, England</subfield>
  </datafield>
  <datafield tag="700" ind1=" " ind2=" ">
    <subfield code="a">Alotaibi, S.</subfield>
    <subfield code="u">Univ Nottingham, Sch Phys &amp; Astron, Nottingham, England</subfield>
  </datafield>
  <datafield tag="700" ind1=" " ind2=" ">
    <subfield code="a">Schmidbauer, M.</subfield>
    <subfield code="u">Leibniz Inst Kristallzuchtung, Max Born Str 2, D-12489 Berlin, Germany</subfield>
  </datafield>
  <datafield tag="700" ind1=" " ind2=" ">
    <subfield code="a">Galeti, H. V. A.</subfield>
    <subfield code="u">Univ Fed Sao Carlos, Elect Engn Dept, BR-13565905 Sao Carlos, SP, Brazil</subfield>
  </datafield>
  <datafield tag="700" ind1=" " ind2=" ">
    <subfield code="a">Henini, M.</subfield>
    <subfield code="u">Univ Nottingham, Sch Phys &amp; Astron, Nottingham, England</subfield>
  </datafield>
  <datafield tag="909" ind1="C" ind2="4">
    <subfield code="p">PHYSICA B-CONDENSED MATTER</subfield>
    <subfield code="v">602</subfield>
  </datafield>
  <datafield tag="980" ind1=" " ind2=" ">
    <subfield code="a">user-tubitak-destekli-proje-yayinlari</subfield>
  </datafield>
  <datafield tag="540" ind1=" " ind2=" ">
    <subfield code="a">Creative Commons Attribution</subfield>
    <subfield code="u">http://www.opendefinition.org/licenses/cc-by</subfield>
  </datafield>
  <datafield tag="024" ind1=" " ind2=" ">
    <subfield code="a">10.1016/j.physb.2020.412487</subfield>
    <subfield code="2">doi</subfield>
  </datafield>
  <datafield tag="245" ind1=" " ind2=" ">
    <subfield code="a">The effect of strain and spatial Bi distribution on the band alignment of GaAsBi single quantum well structure</subfield>
  </datafield>
  <datafield tag="100" ind1=" " ind2=" ">
    <subfield code="a">Gunes, M.</subfield>
    <subfield code="u">Adana Alparslan Turkes Sci &amp; Technol Univ, Engn Fac, Dept Mat Engn, TR-01180 Adana, Turkey</subfield>
  </datafield>
  <datafield tag="909" ind1="C" ind2="O">
    <subfield code="o">oai:aperta.ulakbim.gov.tr:232016</subfield>
    <subfield code="p">user-tubitak-destekli-proje-yayinlari</subfield>
  </datafield>
  <datafield tag="650" ind1="1" ind2="7">
    <subfield code="2">opendefinition.org</subfield>
    <subfield code="a">cc-by</subfield>
  </datafield>
  <datafield tag="260" ind1=" " ind2=" ">
    <subfield code="c">2021-01-01</subfield>
  </datafield>
  <datafield tag="856" ind1="4" ind2=" ">
    <subfield code="u">https://aperta.ulakbim.gov.trrecord/232016/files/bib-ee1cff54-752a-4443-b900-eb72af08b8da.txt</subfield>
    <subfield code="z">md5:ebac31631d4515f80c833aa1c7128467</subfield>
    <subfield code="s">299</subfield>
  </datafield>
  <datafield tag="542" ind1=" " ind2=" ">
    <subfield code="l">open</subfield>
  </datafield>
  <controlfield tag="005">20221007081834.0</controlfield>
  <controlfield tag="001">232016</controlfield>
  <datafield tag="980" ind1=" " ind2=" ">
    <subfield code="a">publication</subfield>
    <subfield code="b">article</subfield>
  </datafield>
  <datafield tag="520" ind1=" " ind2=" ">
    <subfield code="a">The band line-up and band offset calculations of GaAs0.978Bi0.022/GaAs single quantum well with spatial changes of Bi composition were reported. The spatial Bi profile and a certain amount of the Bi composition in the barrier layer were determined by HR-XRD measurements. Virtual Crystal Approximation and Valence Band Anti-Crossing models were used including strain effects to obtain conduction and valence band edge shifts with Bi incorporation. Photoluminescence (PL) measurements were performed at a low temperature of 8 K as a function of excitation intensity. The PL spectra have shown asymmetric line shapes, which were fitted with different Gaussian functions. Comparing experimental PL results with calculated band edge energies, it was found that optical transition is a type I under low intensity excitation while the optical transition is switched from type I to type II due to the spatial changes in Bi concentrations. The band offsets Delta E-c/Delta E-v were also determined.</subfield>
  </datafield>
</record>
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