1 Ocak 2021 Dergi makalesi Açık Erişim

Gunes, M.; Donmez, O.; Gumus, C.; Erol, A.; Alghamdi, H.; Alhassan, S.; Alhassni, A.; Alotaibi, S.; Schmidbauer, M.; Galeti, H. V. A.; Henini, M.

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  <identifier identifierType="URL">https://aperta.ulakbim.gov.tr/record/232016</identifier>
  <creators>
    <creator>
      <creatorName>Gunes, M.</creatorName>
      <givenName>M.</givenName>
      <familyName>Gunes</familyName>
      <affiliation>Adana Alparslan Turkes Sci &amp; Technol Univ, Engn Fac, Dept Mat Engn, TR-01180 Adana, Turkey</affiliation>
    </creator>
    <creator>
      <creatorName>Donmez, O.</creatorName>
      <givenName>O.</givenName>
      <familyName>Donmez</familyName>
      <affiliation>Istanbul Univ, Fac Sci, Dept Phys, TR-34134 Istanbul, Turkey</affiliation>
    </creator>
    <creator>
      <creatorName>Gumus, C.</creatorName>
      <givenName>C.</givenName>
      <familyName>Gumus</familyName>
      <affiliation>Cukurova Univ, Phys Dept, TR-01330 Adana, Turkey</affiliation>
    </creator>
    <creator>
      <creatorName>Erol, A.</creatorName>
      <givenName>A.</givenName>
      <familyName>Erol</familyName>
      <affiliation>Istanbul Univ, Fac Sci, Dept Phys, TR-34134 Istanbul, Turkey</affiliation>
    </creator>
    <creator>
      <creatorName>Alghamdi, H.</creatorName>
      <givenName>H.</givenName>
      <familyName>Alghamdi</familyName>
      <affiliation>Univ Nottingham, Sch Phys &amp; Astron, Nottingham, England</affiliation>
    </creator>
    <creator>
      <creatorName>Alhassan, S.</creatorName>
      <givenName>S.</givenName>
      <familyName>Alhassan</familyName>
      <affiliation>Univ Nottingham, Sch Phys &amp; Astron, Nottingham, England</affiliation>
    </creator>
    <creator>
      <creatorName>Alhassni, A.</creatorName>
      <givenName>A.</givenName>
      <familyName>Alhassni</familyName>
      <affiliation>Univ Nottingham, Sch Phys &amp; Astron, Nottingham, England</affiliation>
    </creator>
    <creator>
      <creatorName>Alotaibi, S.</creatorName>
      <givenName>S.</givenName>
      <familyName>Alotaibi</familyName>
      <affiliation>Univ Nottingham, Sch Phys &amp; Astron, Nottingham, England</affiliation>
    </creator>
    <creator>
      <creatorName>Schmidbauer, M.</creatorName>
      <givenName>M.</givenName>
      <familyName>Schmidbauer</familyName>
      <affiliation>Leibniz Inst Kristallzuchtung, Max Born Str 2, D-12489 Berlin, Germany</affiliation>
    </creator>
    <creator>
      <creatorName>Galeti, H. V. A.</creatorName>
      <givenName>H. V. A.</givenName>
      <familyName>Galeti</familyName>
      <affiliation>Univ Fed Sao Carlos, Elect Engn Dept, BR-13565905 Sao Carlos, SP, Brazil</affiliation>
    </creator>
    <creator>
      <creatorName>Henini, M.</creatorName>
      <givenName>M.</givenName>
      <familyName>Henini</familyName>
      <affiliation>Univ Nottingham, Sch Phys &amp; Astron, Nottingham, England</affiliation>
    </creator>
  </creators>
  <titles>
    <title>The Effect Of Strain And Spatial Bi Distribution On The Band Alignment Of Gaasbi Single Quantum Well Structure</title>
  </titles>
  <publisher>Aperta</publisher>
  <publicationYear>2021</publicationYear>
  <dates>
    <date dateType="Issued">2021-01-01</date>
  </dates>
  <resourceType resourceTypeGeneral="Text">Journal article</resourceType>
  <alternateIdentifiers>
    <alternateIdentifier alternateIdentifierType="url">https://aperta.ulakbim.gov.tr/record/232016</alternateIdentifier>
  </alternateIdentifiers>
  <relatedIdentifiers>
    <relatedIdentifier relatedIdentifierType="DOI" relationType="IsIdenticalTo">10.1016/j.physb.2020.412487</relatedIdentifier>
  </relatedIdentifiers>
  <rightsList>
    <rights rightsURI="http://www.opendefinition.org/licenses/cc-by">Creative Commons Attribution</rights>
    <rights rightsURI="info:eu-repo/semantics/openAccess">Open Access</rights>
  </rightsList>
  <descriptions>
    <description descriptionType="Abstract">The band line-up and band offset calculations of GaAs0.978Bi0.022/GaAs single quantum well with spatial changes of Bi composition were reported. The spatial Bi profile and a certain amount of the Bi composition in the barrier layer were determined by HR-XRD measurements. Virtual Crystal Approximation and Valence Band Anti-Crossing models were used including strain effects to obtain conduction and valence band edge shifts with Bi incorporation. Photoluminescence (PL) measurements were performed at a low temperature of 8 K as a function of excitation intensity. The PL spectra have shown asymmetric line shapes, which were fitted with different Gaussian functions. Comparing experimental PL results with calculated band edge energies, it was found that optical transition is a type I under low intensity excitation while the optical transition is switched from type I to type II due to the spatial changes in Bi concentrations. The band offsets Delta E-c/Delta E-v were also determined.</description>
  </descriptions>
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