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Mg3N2 nanocrystallites formation during the GaN:Mg layers growth by the NH3-MBE technique

Malin, T., V; Mansurov, V. G.; Galitsyn, Yu G.; Milakhin, D. S.; Protasov, D. Yu; Ber, B. Ya; Kazantsev, D. Yu; Ratnikov, V. V.; Shcheglov, M. P.; Smirnov, A. N.; Davydov, V. Yu; Zhuravlev, K. S.


BibTeX

@article{malin_t_v_2021_229982,
  author       = {Malin, T., V and
                  Mansurov, V. G. and
                  Galitsyn, Yu G. and
                  Milakhin, D. S. and
                  Protasov, D. Yu and
                  Ber, B. Ya and
                  Kazantsev, D. Yu and
                  Ratnikov, V. V. and
                  Shcheglov, M. P. and
                  Smirnov, A. N. and
                  Davydov, V. Yu and
                  Zhuravlev, K. S.},
  title        = {{Mg3N2 nanocrystallites formation during the GaN:Mg 
                   layers growth by the NH3-MBE technique}},
  journal      = {JOURNAL OF CRYSTAL GROWTH},
  year         = 2021,
  volume       = 554,
  month        = jan,
}
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