1 Ocak 2021 Dergi makalesi Açık Erişim

Malin, T., V; Mansurov, V. G.; Galitsyn, Yu G.; Milakhin, D. S.; Protasov, D. Yu; Ber, B. Ya; Kazantsev, D. Yu; Ratnikov, V. V.; Shcheglov, M. P.; Smirnov, A. N.; Davydov, V. Yu; Zhuravlev, K. S.

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  <identifier identifierType="URL">https://aperta.ulakbim.gov.tr/record/229982</identifier>
  <creators>
    <creator>
      <creatorName>Malin, T., V</creatorName>
      <affiliation>Russian Acad Sci, Siberian Branch, Rzhanov Inst Semicond Phys, Phys &amp; Engn Semicond Struct Dept, Novosibirsk, Russia</affiliation>
    </creator>
    <creator>
      <creatorName>Mansurov, V. G.</creatorName>
      <givenName>V. G.</givenName>
      <familyName>Mansurov</familyName>
      <affiliation>Russian Acad Sci, Siberian Branch, Rzhanov Inst Semicond Phys, Phys &amp; Engn Semicond Struct Dept, Novosibirsk, Russia</affiliation>
    </creator>
    <creator>
      <creatorName>Galitsyn, Yu G.</creatorName>
      <givenName>Yu G.</givenName>
      <familyName>Galitsyn</familyName>
      <affiliation>Russian Acad Sci, Siberian Branch, Rzhanov Inst Semicond Phys, Phys &amp; Engn Semicond Struct Dept, Novosibirsk, Russia</affiliation>
    </creator>
    <creator>
      <creatorName>Milakhin, D. S.</creatorName>
      <givenName>D. S.</givenName>
      <familyName>Milakhin</familyName>
      <affiliation>Russian Acad Sci, Siberian Branch, Rzhanov Inst Semicond Phys, Phys &amp; Engn Semicond Struct Dept, Novosibirsk, Russia</affiliation>
    </creator>
    <creator>
      <creatorName>Protasov, D. Yu</creatorName>
      <givenName>D. Yu</givenName>
      <familyName>Protasov</familyName>
    </creator>
    <creator>
      <creatorName>Ber, B. Ya</creatorName>
      <givenName>B. Ya</givenName>
      <familyName>Ber</familyName>
      <affiliation>Ioffe Inst, St Petersburg 194021, Russia</affiliation>
    </creator>
    <creator>
      <creatorName>Kazantsev, D. Yu</creatorName>
      <givenName>D. Yu</givenName>
      <familyName>Kazantsev</familyName>
      <affiliation>Ioffe Inst, St Petersburg 194021, Russia</affiliation>
    </creator>
    <creator>
      <creatorName>Ratnikov, V. V.</creatorName>
      <givenName>V. V.</givenName>
      <familyName>Ratnikov</familyName>
      <affiliation>Ioffe Inst, St Petersburg 194021, Russia</affiliation>
    </creator>
    <creator>
      <creatorName>Shcheglov, M. P.</creatorName>
      <givenName>M. P.</givenName>
      <familyName>Shcheglov</familyName>
      <affiliation>Ioffe Inst, St Petersburg 194021, Russia</affiliation>
    </creator>
    <creator>
      <creatorName>Smirnov, A. N.</creatorName>
      <givenName>A. N.</givenName>
      <familyName>Smirnov</familyName>
      <affiliation>Ioffe Inst, St Petersburg 194021, Russia</affiliation>
    </creator>
    <creator>
      <creatorName>Davydov, V. Yu</creatorName>
      <givenName>V. Yu</givenName>
      <familyName>Davydov</familyName>
      <affiliation>Ioffe Inst, St Petersburg 194021, Russia</affiliation>
    </creator>
    <creator>
      <creatorName>Zhuravlev, K. S.</creatorName>
      <givenName>K. S.</givenName>
      <familyName>Zhuravlev</familyName>
    </creator>
  </creators>
  <titles>
    <title>Mg3N2 Nanocrystallites Formation During The Gan:Mg Layers Growth By The Nh3-Mbe Technique</title>
  </titles>
  <publisher>Aperta</publisher>
  <publicationYear>2021</publicationYear>
  <dates>
    <date dateType="Issued">2021-01-01</date>
  </dates>
  <resourceType resourceTypeGeneral="Text">Journal article</resourceType>
  <alternateIdentifiers>
    <alternateIdentifier alternateIdentifierType="url">https://aperta.ulakbim.gov.tr/record/229982</alternateIdentifier>
  </alternateIdentifiers>
  <relatedIdentifiers>
    <relatedIdentifier relatedIdentifierType="DOI" relationType="IsIdenticalTo">10.1016/j.jcrysgro.2020.125963</relatedIdentifier>
  </relatedIdentifiers>
  <rightsList>
    <rights rightsURI="http://www.opendefinition.org/licenses/cc-by">Creative Commons Attribution</rights>
    <rights rightsURI="info:eu-repo/semantics/openAccess">Open Access</rights>
  </rightsList>
  <descriptions>
    <description descriptionType="Abstract">The work is devoted to the study of p-GaN: Mg epitaxial layers grown by the ammonia MBE technique. We find that the conductivity of GaN layers doped with Mg does not change with a postgrowth heat treatment. Formation of Mg3N2 nanocrystallites on GaN surface during epitaxial growth of the GaN layer with a high magnesium doping level was detected by the RHEED technique for the first time. It was shown that the Mg3N2 nanocrystallites formation competes with the acceptor states formation process. It has been proposed that the growth temperature can be applied as an additional "tuning" mechanism which affects the Mg incorporation into the growing GaN:Mg layers.</description>
  </descriptions>
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