1 Ocak 2013 Dergi makalesi Açık Erişim

Alahmed, Z. A.; Mansour, Sh A.; Aydin, M. Enver; Yakuphanoglu, F.

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        "affiliation": "King Saud Univ, Coll Sci, Dept Phys & Astron, Riyadh 11451, Saudi Arabia", 
        "name": "Alahmed, Z. A."
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      {
        "name": "Mansour, Sh A."
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      {
        "affiliation": "Dicle Univ, Fac Arts & Sci, Dept Phys, Diyarbakir, Turkey", 
        "name": "Aydin, M. Enver"
      }, 
      {
        "affiliation": "Firat Univ, Dept Phys, Fac Sci, TR-23169 Elazig, Turkey", 
        "name": "Yakuphanoglu, F."
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    "description": "6,13-Bis(triisopropylsilylethynyl) pentacene (TIPS) and poly[2-methoxy-5-(2-ethyl) hexoxy-phenylenevinylene] (MEH-PPV) blends with different ratios were deposited onto a p-type silicon (p-Si) single crystal wafer using spin coating technique. The dark current-voltage characteristics of the fabricated diodes were studied at room temperature. This study was carried out to predict the best blend composite to obtain a qualified diode for use in potential application. The obtained results suggest that the diode with 10:4 ratio between TIPS and MEH-PPV has the highest values for both the rectification factor (r=1.7 x 10(3)) and the ratio between shunt resistance, R-sh, and series resistance, R-s, (R-sh/R-s=1.23 x 10(4)) among the investigated diodes. Accordingly, the capacitance-voltage-frequency and conductance-voltage-frequency measurements were carried out for this diode in the frequency range between 10 kHz and 1 MHz at room temperature. Moreover, the I-V characteristics of such a diode were studied under different illumination intensities (P = 20 : 100 mW/cm(2)). The obtained results show a highly optoelectric response; i.e., the diode can be operated as a heterojunction photodiode. Crown Copyright (c) 2013 Published by Elsevier Ltd. All rights reserved.", 
    "doi": "10.1016/j.ssc.2013.03.015", 
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    "journal": {
      "pages": "23-27", 
      "title": "SOLID STATE COMMUNICATIONS", 
      "volume": "163"
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    "publication_date": "2013-01-01", 
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    "title": "Hybrid photodiodes based on 6,13-bis(triisopropylsilylethynyl) pentacene: poly[2-methoxy-5-(2-ethyl) hexoxy-phenylenevinylene]/p-silicon"
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