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Alahmed, Z. A.; Mansour, Sh A.; Aydin, M. Enver; Yakuphanoglu, F.
<?xml version='1.0' encoding='utf-8'?> <resource xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns="http://datacite.org/schema/kernel-4" xsi:schemaLocation="http://datacite.org/schema/kernel-4 http://schema.datacite.org/meta/kernel-4.1/metadata.xsd"> <identifier identifierType="URL">https://aperta.ulakbim.gov.tr/record/12827</identifier> <creators> <creator> <creatorName>Alahmed, Z. A.</creatorName> <givenName>Z. A.</givenName> <familyName>Alahmed</familyName> <affiliation>King Saud Univ, Coll Sci, Dept Phys & Astron, Riyadh 11451, Saudi Arabia</affiliation> </creator> <creator> <creatorName>Mansour, Sh A.</creatorName> <givenName>Sh A.</givenName> <familyName>Mansour</familyName> </creator> <creator> <creatorName>Aydin, M. Enver</creatorName> <givenName>M. Enver</givenName> <familyName>Aydin</familyName> <affiliation>Dicle Univ, Fac Arts & Sci, Dept Phys, Diyarbakir, Turkey</affiliation> </creator> <creator> <creatorName>Yakuphanoglu, F.</creatorName> <givenName>F.</givenName> <familyName>Yakuphanoglu</familyName> <affiliation>Firat Univ, Dept Phys, Fac Sci, TR-23169 Elazig, Turkey</affiliation> </creator> </creators> <titles> <title>Hybrid Photodiodes Based On 6,13-Bis(Triisopropylsilylethynyl) Pentacene: Poly[2-Methoxy-5-(2-Ethyl) Hexoxy-Phenylenevinylene]/P-Silicon</title> </titles> <publisher>Aperta</publisher> <publicationYear>2013</publicationYear> <dates> <date dateType="Issued">2013-01-01</date> </dates> <resourceType resourceTypeGeneral="Text">Journal article</resourceType> <alternateIdentifiers> <alternateIdentifier alternateIdentifierType="url">https://aperta.ulakbim.gov.tr/record/12827</alternateIdentifier> </alternateIdentifiers> <relatedIdentifiers> <relatedIdentifier relatedIdentifierType="DOI" relationType="IsIdenticalTo">10.1016/j.ssc.2013.03.015</relatedIdentifier> </relatedIdentifiers> <rightsList> <rights rightsURI="http://www.opendefinition.org/licenses/cc-by">Creative Commons Attribution</rights> <rights rightsURI="info:eu-repo/semantics/openAccess">Open Access</rights> </rightsList> <descriptions> <description descriptionType="Abstract">6,13-Bis(triisopropylsilylethynyl) pentacene (TIPS) and poly[2-methoxy-5-(2-ethyl) hexoxy-phenylenevinylene] (MEH-PPV) blends with different ratios were deposited onto a p-type silicon (p-Si) single crystal wafer using spin coating technique. The dark current-voltage characteristics of the fabricated diodes were studied at room temperature. This study was carried out to predict the best blend composite to obtain a qualified diode for use in potential application. The obtained results suggest that the diode with 10:4 ratio between TIPS and MEH-PPV has the highest values for both the rectification factor (r=1.7 x 10(3)) and the ratio between shunt resistance, R-sh, and series resistance, R-s, (R-sh/R-s=1.23 x 10(4)) among the investigated diodes. Accordingly, the capacitance-voltage-frequency and conductance-voltage-frequency measurements were carried out for this diode in the frequency range between 10 kHz and 1 MHz at room temperature. Moreover, the I-V characteristics of such a diode were studied under different illumination intensities (P = 20 : 100 mW/cm(2)). The obtained results show a highly optoelectric response; i.e., the diode can be operated as a heterojunction photodiode. Crown Copyright (c) 2013 Published by Elsevier Ltd. All rights reserved.</description> </descriptions> </resource>
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