1 Ocak 1997 Dergi makalesi Açık Erişim

Tagiyev, M; Samedov, F; Samedov, S

Dublin Core

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  <dc:creator>Tagiyev, M</dc:creator>
  <dc:creator>Samedov, F</dc:creator>
  <dc:creator>Samedov, S</dc:creator>
  <dc:date>1997-01-01</dc:date>
  <dc:description>Thin films of Bi85Sb15 solid solution wich can be used in thermoelectric devices for cooling and stabilizing the temperature of Gann and Impatt diodes have been obtained by extrusion method, They have surface roughness in the range 10-80 mu m, dielectric losses tan delta similar to 10(-3) at 10 GHz, thermal conductivity beta-4x10(2) W/(M.K).</dc:description>
  <dc:identifier>https://aperta.ulakbim.gov.trrecord/102911</dc:identifier>
  <dc:identifier>oai:zenodo.org:102911</dc:identifier>
  <dc:rights>info:eu-repo/semantics/openAccess</dc:rights>
  <dc:rights>http://www.opendefinition.org/licenses/cc-by</dc:rights>
  <dc:source>INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES 18(9) 1813-1820</dc:source>
  <dc:title>Anisotropy of electrical properties of lead doped extruded samples of Bi85Sb15</dc:title>
  <dc:type>info:eu-repo/semantics/article</dc:type>
  <dc:type>publication-article</dc:type>
</oai_dc:dc>