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Anisotropy of electrical properties of lead doped extruded samples of Bi85Sb15

Tagiyev, M; Samedov, F; Samedov, S


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  <identifier identifierType="URL">https://aperta.ulakbim.gov.tr/record/102911</identifier>
  <creators>
    <creator>
      <creatorName>Tagiyev, M</creatorName>
      <givenName>M</givenName>
      <familyName>Tagiyev</familyName>
    </creator>
    <creator>
      <creatorName>Samedov, F</creatorName>
      <givenName>F</givenName>
      <familyName>Samedov</familyName>
    </creator>
    <creator>
      <creatorName>Samedov, S</creatorName>
      <givenName>S</givenName>
      <familyName>Samedov</familyName>
    </creator>
  </creators>
  <titles>
    <title>Anisotropy Of Electrical Properties Of Lead Doped Extruded Samples Of Bi85Sb15</title>
  </titles>
  <publisher>Aperta</publisher>
  <publicationYear>1997</publicationYear>
  <dates>
    <date dateType="Issued">1997-01-01</date>
  </dates>
  <resourceType resourceTypeGeneral="Text">Journal article</resourceType>
  <alternateIdentifiers>
    <alternateIdentifier alternateIdentifierType="url">https://aperta.ulakbim.gov.tr/record/102911</alternateIdentifier>
  </alternateIdentifiers>
  <relatedIdentifiers>
    <relatedIdentifier relatedIdentifierType="DOI" relationType="IsVersionOf">10.81043/aperta.102910</relatedIdentifier>
    <relatedIdentifier relatedIdentifierType="DOI" relationType="IsIdenticalTo">10.81043/aperta.102911</relatedIdentifier>
  </relatedIdentifiers>
  <rightsList>
    <rights rightsURI="http://www.opendefinition.org/licenses/cc-by">Creative Commons Attribution</rights>
    <rights rightsURI="info:eu-repo/semantics/openAccess">Open Access</rights>
  </rightsList>
  <descriptions>
    <description descriptionType="Abstract">Thin films of Bi85Sb15 solid solution wich can be used in thermoelectric devices for cooling and stabilizing the temperature of Gann and Impatt diodes have been obtained by extrusion method, They have surface roughness in the range 10-80 mu m, dielectric losses tan delta similar to 10(-3) at 10 GHz, thermal conductivity beta-4x10(2) W/(M.K).</description>
  </descriptions>
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