Konferans bildirisi Açık Erişim
Ozen, Soner; Bilgic, Eyup; Gulmez, Gulay; Senay, Volkan; Pat, Suat; Korkmaz, Sadan; Mohammadigharehbagh, Reza
<?xml version='1.0' encoding='utf-8'?> <oai_dc:dc xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd"> <dc:creator>Ozen, Soner</dc:creator> <dc:creator>Bilgic, Eyup</dc:creator> <dc:creator>Gulmez, Gulay</dc:creator> <dc:creator>Senay, Volkan</dc:creator> <dc:creator>Pat, Suat</dc:creator> <dc:creator>Korkmaz, Sadan</dc:creator> <dc:creator>Mohammadigharehbagh, Reza</dc:creator> <dc:date>2016-01-01</dc:date> <dc:description>In this study, AlGaN acoustic sensors were deposited on aluminum metal substrate by thermionic vacuum arc (TVA) method, for the first time. Impedance analyses of the fabricated acoustic sensors were investigated for the determining of effect of the nano layer thickness. Thickness values are very close to each others. Fabricated sensors have been fabricated from AlGaN deposited on aluminum substrates. Gallium materials are used in many applications for optoelectronic device and semiconductor technology. Thermionic vacuum arc is the deposition technology for the variously materials and applications field. TVA production parameters and some properties of the deposited layers were investigated. TVA is the fast deposition technology for the gallium compounds and doped gallium compounds. Obtained results that AlGaN layer are very promising material for an acoustic sensor but also TVA is proper fast technology for the production.</dc:description> <dc:identifier>https://aperta.ulakbim.gov.trrecord/98807</dc:identifier> <dc:identifier>oai:zenodo.org:98807</dc:identifier> <dc:rights>info:eu-repo/semantics/openAccess</dc:rights> <dc:rights>http://www.opendefinition.org/licenses/cc-by</dc:rights> <dc:title>Investigation of the Thickness Effect to Impedance Analysis Results AlGaN Acoustic Sensor</dc:title> <dc:type>info:eu-repo/semantics/conferencePaper</dc:type> <dc:type>publication-conferencepaper</dc:type> </oai_dc:dc>
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