1 Ocak 2018 Dergi makalesi Açık Erişim

Kupa, I.; Unal, Y.; Cetin, S. S.; Durna, L.; Topalli, K.; Okyay, A. K.; Ates, H.

Dublin Core

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<oai_dc:dc xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd">
  <dc:creator>Kupa, I.</dc:creator>
  <dc:creator>Unal, Y.</dc:creator>
  <dc:creator>Cetin, S. S.</dc:creator>
  <dc:creator>Durna, L.</dc:creator>
  <dc:creator>Topalli, K.</dc:creator>
  <dc:creator>Okyay, A. K.</dc:creator>
  <dc:creator>Ates, H.</dc:creator>
  <dc:date>2018-01-01</dc:date>
  <dc:description>TiO2 thin films have been deposited on glass and Si(100) by atomic layer deposition (ALD) technique using tetrakis(diethylamido)titanium(IV) and water vapor as reactants. Thorough investigation of the properties of the TiO2/glass and TiO2/Si thin films was carried out, varying the deposition temperature in the range from 100A degrees C to 250A degrees C while keeping the number of reaction cycles fixed at 1000. Physical and material property analyses were performed to investigate optical and electrical properties, composition, structure, and morphology. TiO2 films grown by ALD may represent promising materials for future applications in optoelectronic devices.</dc:description>
  <dc:identifier>https://aperta.ulakbim.gov.trrecord/93509</dc:identifier>
  <dc:identifier>oai:zenodo.org:93509</dc:identifier>
  <dc:rights>info:eu-repo/semantics/openAccess</dc:rights>
  <dc:rights>http://www.opendefinition.org/licenses/cc-by</dc:rights>
  <dc:source>JOURNAL OF ELECTRONIC MATERIALS 47(8) 4502-4507</dc:source>
  <dc:title>Optical, Electrical, and Crystal Properties of TiO2 Thin Films Grown by Atomic Layer Deposition on Silicon and Glass Substrates</dc:title>
  <dc:type>info:eu-repo/semantics/article</dc:type>
  <dc:type>publication-article</dc:type>
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