1 Ocak 2012 Dergi makalesi Açık Erişim

Dario, Aidin; Sicim, Hasan Ozgen; Balikci, Ercan

Dublin Core

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  <dc:creator>Dario, Aidin</dc:creator>
  <dc:creator>Sicim, Hasan Ozgen</dc:creator>
  <dc:creator>Balikci, Ercan</dc:creator>
  <dc:date>2012-01-01</dc:date>
  <dc:description>The influence of a submerged baffle on single crystal growth of germanium-silicon is investigated. Twelve crystals have been grown. Eight of them have been grown using the axial heat processing (AHP) technique which makes use of a baffle submerged into the melt. The other crystals have been grown using the conventional vertical Bridgman (VB) technique. Crystals have been grown with 5 and 12 at% silicon at two different velocities, 0.75 and 2mm/h. Compositional mapping of crystals has been performed by energy dispersive X-ray spectroscopy (EDS). Then, effects of a submerged baffle on the longitudinal and radial solute distribution and interface stability have been discussed. (c) 2012 Elsevier B.V. All rights reserved.</dc:description>
  <dc:identifier>https://aperta.ulakbim.gov.trrecord/88191</dc:identifier>
  <dc:identifier>oai:zenodo.org:88191</dc:identifier>
  <dc:rights>info:eu-repo/semantics/openAccess</dc:rights>
  <dc:rights>http://www.opendefinition.org/licenses/cc-by</dc:rights>
  <dc:source>JOURNAL OF CRYSTAL GROWTH 351(1) 1-8</dc:source>
  <dc:title>A comparative study on the growth of germanium-silicon single crystals grown by the vertical Bridgman and axial heat processing techniques</dc:title>
  <dc:type>info:eu-repo/semantics/article</dc:type>
  <dc:type>publication-article</dc:type>
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