1 Ocak 2017 Konferans bildirisi Açık Erişim

Wipf, S. Tolunay; Goeritz, A.; Wipf, C.; Wietstruck, M.; Burak, A.; Tuerkmen, E.; Guerbuez, Y.; Kaynak, M.

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  <identifier identifierType="URL">https://aperta.ulakbim.gov.tr/record/52151</identifier>
  <creators>
    <creator>
      <creatorName>Wipf, S. Tolunay</creatorName>
      <givenName>S. Tolunay</givenName>
      <familyName>Wipf</familyName>
      <affiliation>IHP, Technol Pk 25, D-15236 Frankfurt, Oder, Germany</affiliation>
    </creator>
    <creator>
      <creatorName>Goeritz, A.</creatorName>
      <givenName>A.</givenName>
      <familyName>Goeritz</familyName>
      <affiliation>IHP, Technol Pk 25, D-15236 Frankfurt, Oder, Germany</affiliation>
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      <creatorName>Wipf, C.</creatorName>
      <givenName>C.</givenName>
      <familyName>Wipf</familyName>
      <affiliation>IHP, Technol Pk 25, D-15236 Frankfurt, Oder, Germany</affiliation>
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    <creator>
      <creatorName>Wietstruck, M.</creatorName>
      <givenName>M.</givenName>
      <familyName>Wietstruck</familyName>
      <affiliation>IHP, Technol Pk 25, D-15236 Frankfurt, Oder, Germany</affiliation>
    </creator>
    <creator>
      <creatorName>Burak, A.</creatorName>
      <givenName>A.</givenName>
      <familyName>Burak</familyName>
      <affiliation>Sabanci Univ, TR-34956 Istanbul, Turkey</affiliation>
    </creator>
    <creator>
      <creatorName>Tuerkmen, E.</creatorName>
      <givenName>E.</givenName>
      <familyName>Tuerkmen</familyName>
      <affiliation>Sabanci Univ, TR-34956 Istanbul, Turkey</affiliation>
    </creator>
    <creator>
      <creatorName>Guerbuez, Y.</creatorName>
      <givenName>Y.</givenName>
      <familyName>Guerbuez</familyName>
      <affiliation>Sabanci Univ, TR-34956 Istanbul, Turkey</affiliation>
    </creator>
    <creator>
      <creatorName>Kaynak, M.</creatorName>
      <givenName>M.</givenName>
      <familyName>Kaynak</familyName>
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  <titles>
    <title>240 Ghz Rf-Mems Switch In A 0.13 Mu M Sige Bicmos Technology</title>
  </titles>
  <publisher>Aperta</publisher>
  <publicationYear>2017</publicationYear>
  <dates>
    <date dateType="Issued">2017-01-01</date>
  </dates>
  <resourceType resourceTypeGeneral="Text">Conference paper</resourceType>
  <alternateIdentifiers>
    <alternateIdentifier alternateIdentifierType="url">https://aperta.ulakbim.gov.tr/record/52151</alternateIdentifier>
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  <relatedIdentifiers>
    <relatedIdentifier relatedIdentifierType="DOI" relationType="IsVersionOf">10.81043/aperta.52150</relatedIdentifier>
    <relatedIdentifier relatedIdentifierType="DOI" relationType="IsIdenticalTo">10.81043/aperta.52151</relatedIdentifier>
  </relatedIdentifiers>
  <rightsList>
    <rights rightsURI="http://www.opendefinition.org/licenses/cc-by">Creative Commons Attribution</rights>
    <rights rightsURI="info:eu-repo/semantics/openAccess">Open Access</rights>
  </rightsList>
  <descriptions>
    <description descriptionType="Abstract">This paper presents an RF-MEMS switch fabricated in a 0.13 mu m SiGe BiCMOS process technology for 240 GHz applications. The fabricated RF-MEMS switch provides a high capacitance C-on/C-off ratio of 8.78 and beyond state of the art RF performances, 0.44 dB of insertion loss and 24.6 dB of isolation at 240 GHz. The return loss is better than 9.6 dB over the J-band (220 - 325 GHz). To the best of the authors' knowledge, the results achieved in this study are the lowest insertion loss and the highest isolation of a Single-Pole Single-Throw (SPST) switch reported at 240 GHz.</description>
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