1 Ocak 2017 Dergi makalesi Açık Erişim

Gorgulu, K.; Gok, A.; Yilmaz, M.; Topalli, K.; Okyay, A. K.

MARC21 XML

<?xml version='1.0' encoding='UTF-8'?>
<record xmlns="http://www.loc.gov/MARC21/slim">
  <leader>00000nam##2200000uu#4500</leader>
  <datafield tag="700" ind1=" " ind2=" ">
    <subfield code="a">Gok, A.</subfield>
    <subfield code="u">Bilkent Univ, Dept Elect &amp; Elect Engn, TR-06800 Ankara, Turkey</subfield>
  </datafield>
  <datafield tag="700" ind1=" " ind2=" ">
    <subfield code="a">Yilmaz, M.</subfield>
    <subfield code="u">Bilkent Univ, UNAM Natl Nanotechnol Res Ctr, TR-06800 Ankara, Turkey</subfield>
  </datafield>
  <datafield tag="700" ind1=" " ind2=" ">
    <subfield code="a">Topalli, K.</subfield>
  </datafield>
  <datafield tag="700" ind1=" " ind2=" ">
    <subfield code="a">Okyay, A. K.</subfield>
  </datafield>
  <datafield tag="909" ind1="C" ind2="4">
    <subfield code="p">JOURNAL OF OPTICS</subfield>
    <subfield code="v">19</subfield>
    <subfield code="n">2</subfield>
  </datafield>
  <datafield tag="980" ind1=" " ind2=" ">
    <subfield code="a">user-tubitak-destekli-proje-yayinlari</subfield>
  </datafield>
  <datafield tag="540" ind1=" " ind2=" ">
    <subfield code="a">Creative Commons Attribution</subfield>
    <subfield code="u">http://www.opendefinition.org/licenses/cc-by</subfield>
  </datafield>
  <datafield tag="024" ind1=" " ind2=" ">
    <subfield code="a">10.1088/2040-8986/19/2/025002</subfield>
    <subfield code="2">doi</subfield>
  </datafield>
  <datafield tag="245" ind1=" " ind2=" ">
    <subfield code="a">High-conductivity silicon based spectrally selective plasmonic surfaces for sensing in the infrared region</subfield>
  </datafield>
  <datafield tag="100" ind1=" " ind2=" ">
    <subfield code="a">Gorgulu, K.</subfield>
    <subfield code="u">Bilkent Univ, Dept Elect &amp; Elect Engn, TR-06800 Ankara, Turkey</subfield>
  </datafield>
  <datafield tag="909" ind1="C" ind2="O">
    <subfield code="o">oai:zenodo.org:50445</subfield>
    <subfield code="p">user-tubitak-destekli-proje-yayinlari</subfield>
  </datafield>
  <datafield tag="650" ind1="1" ind2="7">
    <subfield code="2">opendefinition.org</subfield>
    <subfield code="a">cc-by</subfield>
  </datafield>
  <datafield tag="260" ind1=" " ind2=" ">
    <subfield code="c">2017-01-01</subfield>
  </datafield>
  <datafield tag="856" ind1="4" ind2=" ">
    <subfield code="u">https://aperta.ulakbim.gov.trrecord/50445/files/bib-9e3f7948-afe0-4b84-8c23-0498ce3b3013.txt</subfield>
    <subfield code="z">md5:43e69a673ee9f8c0384cd96d86d718c9</subfield>
    <subfield code="s">199</subfield>
  </datafield>
  <datafield tag="542" ind1=" " ind2=" ">
    <subfield code="l">open</subfield>
  </datafield>
  <controlfield tag="005">20210315224320.0</controlfield>
  <controlfield tag="001">50445</controlfield>
  <datafield tag="980" ind1=" " ind2=" ">
    <subfield code="a">publication</subfield>
    <subfield code="b">article</subfield>
  </datafield>
  <datafield tag="520" ind1=" " ind2=" ">
    <subfield code="a">Plasmonic perfect absorbers have found a wide range of applications in imaging, sensing, and light harvesting and emitting devices. Traditionally, metals are used to implement plasmonic structures. For sensing applications, it is desirable to integrate nanophotonic active surfaces with biasing and amplification circuitry to achieve monolithic low cost solutions. Commonly used plasmonic metals such as Au and Ag are not compatible with standard silicon complementary metal-oxide-semiconductor (CMOS) technology. Here we demonstrate plasmonic perfect absorbers based on high conductivity silicon. Standard optical lithography and reactive ion etching techniques were used for the patterning of the samples. We present computational and experimental results of surface plasmon resonances excited on a silicon surface at normal and oblique incidences. We experimentally demonstrate our absorbers as ultra-low cost, CMOS-compatible and efficient refractive index sensing surfaces. The experimental results reveal that the structure exhibits a sensitivity of around 11 000 nm/RIU and a figure of merit of up to 2.5. We also show that the sensing performance of the structure can be improved by increasing doping density.</subfield>
  </datafield>
</record>