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Modeling of quantum point contacts in high magnetic fields and with current bias outside the linear response regime

Arslan, S.; Cicek, E.; Eksi, D.; Aktas, S.; Weichselbaum, A.; Siddiki, A.


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  <identifier identifierType="URL">https://aperta.ulakbim.gov.tr/record/43249</identifier>
  <creators>
    <creator>
      <creatorName>Arslan, S.</creatorName>
      <givenName>S.</givenName>
      <familyName>Arslan</familyName>
    </creator>
    <creator>
      <creatorName>Cicek, E.</creatorName>
      <givenName>E.</givenName>
      <familyName>Cicek</familyName>
      <affiliation>Trakya Univ, Fac Arts &amp; Sci, Dept Phys, TR-22030 Edirne, Turkey</affiliation>
    </creator>
    <creator>
      <creatorName>Eksi, D.</creatorName>
      <givenName>D.</givenName>
      <familyName>Eksi</familyName>
      <affiliation>Trakya Univ, Fac Arts &amp; Sci, Dept Phys, TR-22030 Edirne, Turkey</affiliation>
    </creator>
    <creator>
      <creatorName>Aktas, S.</creatorName>
      <givenName>S.</givenName>
      <familyName>Aktas</familyName>
      <affiliation>Trakya Univ, Fac Arts &amp; Sci, Dept Phys, TR-22030 Edirne, Turkey</affiliation>
    </creator>
    <creator>
      <creatorName>Weichselbaum, A.</creatorName>
      <givenName>A.</givenName>
      <familyName>Weichselbaum</familyName>
    </creator>
    <creator>
      <creatorName>Siddiki, A.</creatorName>
      <givenName>A.</givenName>
      <familyName>Siddiki</familyName>
    </creator>
  </creators>
  <titles>
    <title>Modeling Of Quantum Point Contacts In High Magnetic Fields And With Current Bias Outside The Linear Response Regime</title>
  </titles>
  <publisher>Aperta</publisher>
  <publicationYear>2008</publicationYear>
  <dates>
    <date dateType="Issued">2008-01-01</date>
  </dates>
  <resourceType resourceTypeGeneral="Text">Journal article</resourceType>
  <alternateIdentifiers>
    <alternateIdentifier alternateIdentifierType="url">https://aperta.ulakbim.gov.tr/record/43249</alternateIdentifier>
  </alternateIdentifiers>
  <relatedIdentifiers>
    <relatedIdentifier relatedIdentifierType="DOI" relationType="IsIdenticalTo">10.1103/PhysRevB.78.125423</relatedIdentifier>
  </relatedIdentifiers>
  <rightsList>
    <rights rightsURI="http://www.opendefinition.org/licenses/cc-by">Creative Commons Attribution</rights>
    <rights rightsURI="info:eu-repo/semantics/openAccess">Open Access</rights>
  </rightsList>
  <descriptions>
    <description descriptionType="Abstract">The electron and current-density distributions in the close proximity of quantum point contacts (QPCs) are investigated. A three-dimensional Poisson equation is solved self-consistently to obtain the electron density and potential profile in the absence of an external magnetic field for gate and etching defined devices. We observe the surface charges and their apparent effect on the confinement potential, when considering the (deeply) etched QPCs. In the presence of an external magnetic field, we investigate the formation of the incompressible strips and their influence on the current distribution both in the linear response and out of linear response regime. A spatial asymmetry of the current carrying incompressible strips, induced by the large source drain voltages, is reported for such devices in the nonlinear regime.</description>
  </descriptions>
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