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Determination of deep trapping center parameters in as-grown Tl2Ga2S3Se layered crystals

Yildirim, Tacettin; Gasanly, Nizami M.


DataCite XML

<?xml version='1.0' encoding='utf-8'?>
<resource xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns="http://datacite.org/schema/kernel-4" xsi:schemaLocation="http://datacite.org/schema/kernel-4 http://schema.datacite.org/meta/kernel-4.1/metadata.xsd">
  <identifier identifierType="URL">https://aperta.ulakbim.gov.tr/record/37247</identifier>
  <creators>
    <creator>
      <creatorName>Yildirim, Tacettin</creatorName>
      <givenName>Tacettin</givenName>
      <familyName>Yildirim</familyName>
      <affiliation>Nevsehir Univ, Dept Phys, TR-50300 Nevsehir, Turkey</affiliation>
    </creator>
    <creator>
      <creatorName>Gasanly, Nizami M.</creatorName>
      <givenName>Nizami M.</givenName>
      <familyName>Gasanly</familyName>
      <affiliation>Middle E Tech Univ, Dept Phys, TR-06531 Ankara, Turkey</affiliation>
    </creator>
  </creators>
  <titles>
    <title>Determination Of Deep Trapping Center Parameters In As-Grown Tl2Ga2S3Se Layered Crystals</title>
  </titles>
  <publisher>Aperta</publisher>
  <publicationYear>2009</publicationYear>
  <dates>
    <date dateType="Issued">2009-01-01</date>
  </dates>
  <resourceType resourceTypeGeneral="Text">Journal article</resourceType>
  <alternateIdentifiers>
    <alternateIdentifier alternateIdentifierType="url">https://aperta.ulakbim.gov.tr/record/37247</alternateIdentifier>
  </alternateIdentifiers>
  <relatedIdentifiers>
    <relatedIdentifier relatedIdentifierType="DOI" relationType="IsIdenticalTo">10.1016/j.solidstatesciences.2009.06.025</relatedIdentifier>
  </relatedIdentifiers>
  <rightsList>
    <rights rightsURI="http://www.opendefinition.org/licenses/cc-by">Creative Commons Attribution</rights>
    <rights rightsURI="info:eu-repo/semantics/openAccess">Open Access</rights>
  </rightsList>
  <descriptions>
    <description descriptionType="Abstract">Thermally stimulated current measurements were carried out on as-grown Tl2Ga2S3Se layered single crystals. The investigations were performed in temperatures ranging from 10 to 320 K with heating rates of 0.6-1.2 K s(-1). The analysis of the data revealed the hole trap level located at 498 meV. The activation energies of the traps have been determined using various methods of analysis, and they agree with each other. The calculation for these traps yielded 2.1 x 10(-18) cm(2) for capture cross-section and 2.3 x 10(9) cm(-3) for the concentration. It was concluded that in this center retrapping was negligible, as confirmed by the good agreement between the experimental results and the theoretical predictions of the model that assumes slow retrapping. (C) 2009 Elsevier Masson SAS. All rights reserved.</description>
  </descriptions>
</resource>
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