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Deposition of CdSeTe alloys using CdTe-CdSe mixed powder source material in a close-space sublimation process

Ciris, Ali; Basol, Bulent M.; Atasoy, Yavuz; Karaca, Abdullah; Kuckomeroglu, Tayfur; Tomakin, Murat; Bacaksiz, Emin


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<oai_dc:dc xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd">
  <dc:creator>Ciris, Ali</dc:creator>
  <dc:creator>Basol, Bulent M.</dc:creator>
  <dc:creator>Atasoy, Yavuz</dc:creator>
  <dc:creator>Karaca, Abdullah</dc:creator>
  <dc:creator>Kuckomeroglu, Tayfur</dc:creator>
  <dc:creator>Tomakin, Murat</dc:creator>
  <dc:creator>Bacaksiz, Emin</dc:creator>
  <dc:date>2021-01-01</dc:date>
  <dc:description>CdSexTe1-x films were deposited using a close-space sublimation (CSS) method and CdSe + CdTe mixed powders as the source material. Composition of the source was changed to obtain films with varying x values, and the resulting films were characterized by XRD, SEM, photoluminescence, Raman and optical transmission measurements. All data agreed with the fact that as the Se content of the source material was increased, the composition parameter x also increased. GI-XRD measurements showed the films to be graded in composition, the surface region being more Se-rich. Band gap values obtained from optical measurements showed a minimum band gap of about 1.4 eV for the material that had the highest Se content of about 45% near its top surface. Energy gap vs composition data demonstrated the expected bowing effect in band gap values and a bowing parameter of 0.678 was determined.</dc:description>
  <dc:identifier>https://aperta.ulakbim.gov.trrecord/237370</dc:identifier>
  <dc:identifier>oai:aperta.ulakbim.gov.tr:237370</dc:identifier>
  <dc:rights>info:eu-repo/semantics/openAccess</dc:rights>
  <dc:rights>http://www.opendefinition.org/licenses/cc-by</dc:rights>
  <dc:source>JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 32(7) 9685-9693</dc:source>
  <dc:title>Deposition of CdSeTe alloys using CdTe-CdSe mixed powder source material in a close-space sublimation process</dc:title>
  <dc:type>info:eu-repo/semantics/article</dc:type>
  <dc:type>publication-article</dc:type>
</oai_dc:dc>
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