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AlGaN/GaN-Based Laterally Gated High-Electron-Mobility Transistors With Optimized Linearity

Odabasi, Oguz; Yilmaz, Doan; Aras, Erdem; Asan, Kubra Elif; Zafar, Salahuddin; Akoglu, Busra Cankaya; Butun, Bayram; Ozbay, Ekmel


BibTeX

@article{odabasi_oguz_2021_236312,
  author       = {Odabasi, Oguz and
                  Yilmaz, Doan and
                  Aras, Erdem and
                  Asan, Kubra Elif and
                  Zafar, Salahuddin and
                  Akoglu, Busra Cankaya and
                  Butun, Bayram and
                  Ozbay, Ekmel},
  title        = {{AlGaN/GaN-Based Laterally Gated High-Electron- 
                   Mobility Transistors With Optimized Linearity}},
  journal      = {IEEE TRANSACTIONS ON ELECTRON DEVICES},
  year         = 2021,
  volume       = 68,
  number       = 3,
  pages        = {1016-1023},
  month        = jan,
}
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