1 Ocak 2021 Dergi makalesi Açık Erişim

Kaplan, Hueseyin Kaan; Olkun, Ali; Akay, Sertan Kemal; Pat, Suat

MARC21 XML

<?xml version='1.0' encoding='UTF-8'?>
<record xmlns="http://www.loc.gov/MARC21/slim">
  <leader>00000nam##2200000uu#4500</leader>
  <datafield tag="700" ind1=" " ind2=" ">
    <subfield code="a">Olkun, Ali</subfield>
    <subfield code="u">Bursa Uludag Univ, Fac Arts &amp; Sci, Dept Phys, TR-16059 Bursa, Turkey</subfield>
  </datafield>
  <datafield tag="700" ind1=" " ind2=" ">
    <subfield code="a">Akay, Sertan Kemal</subfield>
    <subfield code="u">Bursa Uludag Univ, Fac Arts &amp; Sci, Dept Phys, TR-16059 Bursa, Turkey</subfield>
  </datafield>
  <datafield tag="700" ind1=" " ind2=" ">
    <subfield code="a">Pat, Suat</subfield>
    <subfield code="u">Eskisehir Osmangazi Univ, Dept Phys, TR-26480 Eskisehir, Turkey</subfield>
  </datafield>
  <datafield tag="909" ind1="C" ind2="4">
    <subfield code="p">OPTICAL AND QUANTUM ELECTRONICS</subfield>
    <subfield code="v">53</subfield>
    <subfield code="n">5</subfield>
  </datafield>
  <datafield tag="980" ind1=" " ind2=" ">
    <subfield code="a">user-tubitak-destekli-proje-yayinlari</subfield>
  </datafield>
  <datafield tag="540" ind1=" " ind2=" ">
    <subfield code="a">Creative Commons Attribution</subfield>
    <subfield code="u">http://www.opendefinition.org/licenses/cc-by</subfield>
  </datafield>
  <datafield tag="024" ind1=" " ind2=" ">
    <subfield code="a">10.1007/s11082-021-02884-1</subfield>
    <subfield code="2">doi</subfield>
  </datafield>
  <datafield tag="245" ind1=" " ind2=" ">
    <subfield code="a">Si-based photodiode and material characterization of TiO2 thin film</subfield>
  </datafield>
  <datafield tag="100" ind1=" " ind2=" ">
    <subfield code="a">Kaplan, Hueseyin Kaan</subfield>
    <subfield code="u">Bursa Uludag Univ, Fac Arts &amp; Sci, Dept Phys, TR-16059 Bursa, Turkey</subfield>
  </datafield>
  <datafield tag="909" ind1="C" ind2="O">
    <subfield code="o">oai:aperta.ulakbim.gov.tr:230022</subfield>
    <subfield code="p">user-tubitak-destekli-proje-yayinlari</subfield>
  </datafield>
  <datafield tag="650" ind1="1" ind2="7">
    <subfield code="2">opendefinition.org</subfield>
    <subfield code="a">cc-by</subfield>
  </datafield>
  <datafield tag="260" ind1=" " ind2=" ">
    <subfield code="c">2021-01-01</subfield>
  </datafield>
  <datafield tag="856" ind1="4" ind2=" ">
    <subfield code="u">https://aperta.ulakbim.gov.trrecord/230022/files/bib-c0098896-0294-4cb7-b503-5e6eb11b934d.txt</subfield>
    <subfield code="z">md5:27c6fcc63e165d902cbf1115ae15c8cd</subfield>
    <subfield code="s">158</subfield>
  </datafield>
  <datafield tag="542" ind1=" " ind2=" ">
    <subfield code="l">open</subfield>
  </datafield>
  <controlfield tag="005">20221007074734.0</controlfield>
  <controlfield tag="001">230022</controlfield>
  <datafield tag="980" ind1=" " ind2=" ">
    <subfield code="a">publication</subfield>
    <subfield code="b">article</subfield>
  </datafield>
  <datafield tag="520" ind1=" " ind2=" ">
    <subfield code="a">This study proposes a different technique known as the thermionic vacuum arc to produce a TiO2/Si heterojunction photodiode with better electrical properties than literature like the ideality factor indicating that the method is very suitable to form an outstanding quality heterojunction interface. The heterojunction is highly sensitive to different light intensities and has stable photocurrent characteristics as a photodiode. Structural and morphological properties of the produced TiO2/Si heterostructure surfaces were investigated via XRD and AFM, respectively. According to XRD analysis, it was observed that the TiO2 thin film was in a polycrystalline structure with the Anatase and Brookite phases. Also, the film surface is homogenous, and a low roughness value was measured as 3 nm. The thin film thickness and the bandgap values (E-g) were determined based on optical methods. The electrical parameters of TiO2 thin film, such as conductivity type, charge carrier density, and mobility, were also determined by Hall Effect Measurement. The Ag/TiO2/Si/Ag heterojunction device characteristics were determined by conducting the current-voltage (I-V) measurement. The ideality factor (n) and the barrier height (Phi (b)) values were determined as 1.7 and 0.65 eV, respectively. The photo-response performance was measured via transient photocurrent (I-T) measurements for different light intensities.</subfield>
  </datafield>
</record>