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Stability of spin droplets in realistic quantum Hall devices

Atci, H.; Erkarslan, U.; Siddiki, A.; Rasanen, E.


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        "name": "Atci, H."
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        "affiliation": "Mugla Univ, Fac Sci, Dept Phys, TR-48170 Kotekli Mugla, Turkey", 
        "name": "Erkarslan, U."
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      {
        "affiliation": "Istanbul Univ, Fac Sci, Dept Phys, TR-34134 Istanbul, Turkey", 
        "name": "Siddiki, A."
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        "name": "Rasanen, E."
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    "description": "We study the formation and characteristics of 'spin droplets', i.e. compact spin-polarized configurations in the highest occupied Landau level, in an etched quantum Hall device at filling factors 2 <= nu <= 3. The confining potential for electrons is obtained with self-consistent electrostatic calculations on a GaAs/AlGaAs heterostructure with experimental system parameters. Real-space spin-density-functional calculations for electrons confined in the obtained potential show the appearance of stable spin droplets at nu similar to 5/2. The qualitative features of the spin droplet are similar to those in idealized (parabolic) quantum-dot systems. The universal stability of the state against geometric deformations underlines the applicability of spin droplets in, for example, spin-transport through quantum point contacts.", 
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