1 Ocak 2013 Dergi makalesi Açık Erişim

Kaya, U.; Hostut, M.; Kilic, A.; Sakiroglu, S.; Sokmen, I.; Ergun, Y.; Aydinli, A.

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  <identifier identifierType="URL">https://aperta.ulakbim.gov.tr/record/14131</identifier>
  <creators>
    <creator>
      <creatorName>Kaya, U.</creatorName>
      <givenName>U.</givenName>
      <familyName>Kaya</familyName>
      <affiliation>Anadolu Univ, Dept Elect &amp; Elect Engn, TR-26555 Eskisehir, Turkey</affiliation>
    </creator>
    <creator>
      <creatorName>Hostut, M.</creatorName>
      <givenName>M.</givenName>
      <familyName>Hostut</familyName>
      <affiliation>Akdeniz Univ, Fac Educ, Dept Secondary Educ Sci &amp; Math, TR-07058 Antalya, Turkey</affiliation>
    </creator>
    <creator>
      <creatorName>Kilic, A.</creatorName>
      <givenName>A.</givenName>
      <familyName>Kilic</familyName>
      <affiliation>Anadolu Univ, Dept Phys, TR-26470 Eskisehir, Turkey</affiliation>
    </creator>
    <creator>
      <creatorName>Sakiroglu, S.</creatorName>
      <givenName>S.</givenName>
      <familyName>Sakiroglu</familyName>
      <affiliation>Dokuz Eylul Univ, Dept Phys, TR-35160 Izmir, Turkey</affiliation>
    </creator>
    <creator>
      <creatorName>Sokmen, I.</creatorName>
      <givenName>I.</givenName>
      <familyName>Sokmen</familyName>
      <affiliation>Dokuz Eylul Univ, Dept Phys, TR-35160 Izmir, Turkey</affiliation>
    </creator>
    <creator>
      <creatorName>Ergun, Y.</creatorName>
      <givenName>Y.</givenName>
      <familyName>Ergun</familyName>
      <affiliation>Anadolu Univ, Dept Phys, TR-26470 Eskisehir, Turkey</affiliation>
    </creator>
    <creator>
      <creatorName>Aydinli, A.</creatorName>
      <givenName>A.</givenName>
      <familyName>Aydinli</familyName>
      <affiliation>Bilkent Univ, Dept Phys, TR-06800 Ankara, Turkey</affiliation>
    </creator>
  </creators>
  <titles>
    <title>Theoretical Investigation Of Inas/Gasb Type-Ii Pin Superlattice Infrared Detector In The Mid Wavelength Infrared Range</title>
  </titles>
  <publisher>Aperta</publisher>
  <publicationYear>2013</publicationYear>
  <dates>
    <date dateType="Issued">2013-01-01</date>
  </dates>
  <resourceType resourceTypeGeneral="Text">Journal article</resourceType>
  <alternateIdentifiers>
    <alternateIdentifier alternateIdentifierType="url">https://aperta.ulakbim.gov.tr/record/14131</alternateIdentifier>
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  <relatedIdentifiers>
    <relatedIdentifier relatedIdentifierType="DOI" relationType="IsIdenticalTo">10.1063/1.4793787</relatedIdentifier>
  </relatedIdentifiers>
  <rightsList>
    <rights rightsURI="http://www.opendefinition.org/licenses/cc-by">Creative Commons Attribution</rights>
    <rights rightsURI="info:eu-repo/semantics/openAccess">Open Access</rights>
  </rightsList>
  <descriptions>
    <description descriptionType="Abstract">In this study, we present the theoretical investigation of type-II InAs/GaSb superlattice p-i-n detector. Kronig-Penney and envelope function approximation is used to calculate band gap energy and superlattice minibands. Variational method is also used to calculate exciton binding energies. Our results show that carriers overlap increases at GaSb/InAs interface on the higher energy side while it decreases at InAs/GaSb interface on the lower energy side with increasing reverse bias due to shifting the hole wavefunction toward to the GaSb/InAs interface decisively. Binding energies increase with increasing electric field due to overall overlap of electron and hole wave functions at the both interfaces in contrast with type I superlattices. This predicts that optical absorption is enhanced with increasing electric field. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4793787]</description>
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