1 Ocak 2020 Dergi makalesi Açık Erişim

Alic, Tugbahan Yilmaz; Ablat, Abduleziz; Kyndiah, Adrica; Nicolas, Yohann; Can, Mustafa; Kus, Mahmut; Abbas, Mamatimin

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{
  "@context": "https://schema.org/", 
  "@id": 11787, 
  "@type": "ScholarlyArticle", 
  "creator": [
    {
      "@type": "Person", 
      "name": "Alic, Tugbahan Yilmaz"
    }, 
    {
      "@type": "Person", 
      "affiliation": "Univ Bordeaux, CNRS, UMR 5218, Lab IMS,ENSCBP, Pessac, France", 
      "name": "Ablat, Abduleziz"
    }, 
    {
      "@type": "Person", 
      "affiliation": "Univ Bordeaux, CNRS, UMR 5218, Lab IMS,ENSCBP, Pessac, France", 
      "name": "Kyndiah, Adrica"
    }, 
    {
      "@type": "Person", 
      "affiliation": "Univ Bordeaux, ISM, C2M, 351 Cours Librat, F-33405 Talence, France", 
      "name": "Nicolas, Yohann"
    }, 
    {
      "@type": "Person", 
      "affiliation": "Katip Celebi Univ, Dept Engn Sci, Izmir, Turkey", 
      "name": "Can, Mustafa"
    }, 
    {
      "@type": "Person", 
      "affiliation": "Konya Tech Univ, Dept Chem Engn, Konya, Turkey", 
      "name": "Kus, Mahmut"
    }, 
    {
      "@type": "Person", 
      "affiliation": "Univ Bordeaux, CNRS, UMR 5218, Lab IMS,ENSCBP, Pessac, France", 
      "name": "Abbas, Mamatimin"
    }
  ], 
  "datePublished": "2020-01-01", 
  "description": "The dielectric/semiconductor interface in organic field effect transistors (OFETs) is critical to their performance. Modification of this interface with functional molecules provides a wide range of possibilities for their applications as sensors. In this work, boronic acid molecules were used to modify the SiO2 dielectric surface in dinaphtho[2,3-b:2',3'-f]thieno[3,2-b] thiophene based OFETs. The device parameters, including most notably the threshold voltage, were significantly improved. The dielectric/semiconductor interface was analyzed using various measurement techniques, such as contact angle and atomic force microscopy. Our work provides evidence that easily functionable boronic acid derivatives improve the device performance of OFETs, which lays the foundation for further studies of such interface modified OFETs for use in sensing applications.", 
  "headline": "Interface modification of DNTT-based organic field effect transistors using boronic acid derivatives", 
  "identifier": 11787, 
  "image": "https://aperta.ulakbim.gov.tr/static/img/logo/aperta_logo_with_icon.svg", 
  "license": "http://www.opendefinition.org/licenses/cc-by", 
  "name": "Interface modification of DNTT-based organic field effect transistors using boronic acid derivatives", 
  "url": "https://aperta.ulakbim.gov.tr/record/11787"
}